Selective etching and X-ray topography have been used to examine dislocation dynamics in In-doped GaAs crystals, where the comparison is made with analogous results for undoped GaAs and for crystals containing Si.
|Number of pages||4|
|Journal||Bulletin of the Academy of Sciences of the U.S.S.R. Physical series|
|Publication status||Published - 1986 Dec 1|
|Event||Proc of the Fifth Int Conf on the Struct and Prop of Dislocat in Semicond - Moscow, USSR|
Duration: 1986 Mar 17 → 1986 Mar 22
ASJC Scopus subject areas