INTERACTION OF DISLOCATIONS AND INDIUM IN GaAs.

Ichiro Yonenaga, M. Takebe, K. Sumino

Research output: Contribution to journalConference articlepeer-review

Abstract

Selective etching and X-ray topography have been used to examine dislocation dynamics in In-doped GaAs crystals, where the comparison is made with analogous results for undoped GaAs and for crystals containing Si.

Original languageEnglish
Pages (from-to)19-22
Number of pages4
JournalBulletin of the Academy of Sciences of the U.S.S.R. Physical series
Volume51
Issue number9
Publication statusPublished - 1986 Dec 1
EventProc of the Fifth Int Conf on the Struct and Prop of Dislocat in Semicond - Moscow, USSR
Duration: 1986 Mar 171986 Mar 22

ASJC Scopus subject areas

  • Engineering(all)

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