Abstract
Selective etching and X-ray topography have been used to examine dislocation dynamics in In-doped GaAs crystals, where the comparison is made with analogous results for undoped GaAs and for crystals containing Si.
| Original language | English |
|---|---|
| Pages (from-to) | 19-22 |
| Number of pages | 4 |
| Journal | Bulletin of the Academy of Sciences of the U.S.S.R. Physical series |
| Volume | 51 |
| Issue number | 9 |
| Publication status | Published - 1986 Dec 1 |
| Event | Proc of the Fifth Int Conf on the Struct and Prop of Dislocat in Semicond - Moscow, USSR Duration: 1986 Mar 17 → 1986 Mar 22 |
ASJC Scopus subject areas
- Engineering(all)