Scanning tunneling microscopy was used to study the interaction of C60 with the silicon rich (3×3) and carbon rich (√3×√3) surfaces of 6H-SiC(0001). For both reconstructions, triangular or hexagonal islands commensurate with the substrate structure were observed at submonolayer coverages. The C60 exhibits island growth on these surfaces, with the second layer nucleating on the C60 islands before completion of the first layer. For coverages greater than one monoloyer, a closed-packed face-centered-cubic (111) structure was formed on the (3×3) surface. On the (√3×√3) surface, a disordered layer was observed. A SiC film was also grown using C60 as the carbon source.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 1997 Jul 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering