Interaction of C60 with the (3×3) and (√3×√3) surfaces of 6H-SiC(0001): Adsorption, decomposition, and SiC growth

L. Li, Y. Hasegawa, H. Shinohara, Toshio Sakurai

    Research output: Contribution to journalArticlepeer-review

    9 Citations (Scopus)

    Abstract

    Scanning tunneling microscopy was used to study the interaction of C60 with the silicon rich (3×3) and carbon rich (√3×√3) surfaces of 6H-SiC(0001). For both reconstructions, triangular or hexagonal islands commensurate with the substrate structure were observed at submonolayer coverages. The C60 exhibits island growth on these surfaces, with the second layer nucleating on the C60 islands before completion of the first layer. For coverages greater than one monoloyer, a closed-packed face-centered-cubic (111) structure was formed on the (3×3) surface. On the (√3×√3) surface, a disordered layer was observed. A SiC film was also grown using C60 as the carbon source.

    Original languageEnglish
    Pages (from-to)1300-1303
    Number of pages4
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Volume15
    Issue number4
    Publication statusPublished - 1997 Jul 1

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electrical and Electronic Engineering

    Fingerprint Dive into the research topics of 'Interaction of C<sub>60</sub> with the (3×3) and (√3×√3) surfaces of 6H-SiC(0001): Adsorption, decomposition, and SiC growth'. Together they form a unique fingerprint.

    Cite this