Interaction of atomic hydrogen with the Si(100)2×1 surface

H. Lu, X. D. Wang, C. L. Bai, T. Hashizume, T. Sakurai

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)


    The interaction of atomic hydrogen with the Si(100)2×1 surface has been investigated in detail by a field ion-scanning tunneling microscope (FI-STM). At low exposure, hydrogen atoms reside singly on top of the dimerised Si atoms, and are imaged brightly. The hydrogen chemisorption induces the buckling of dimers, indicating the strong bonding between Si and hydrogen atoms. The adsorption geometry changed from the (2×1) monohydride phase to the (1×1) dihydride phase with increasing exposure of hydrogen. The former is imaged dark compared with the unreacted Si dimers due to the reduction of the density of electronic states near the Fermi level. Surface etching was also observed during the formation of the dihydride phase. The behavior of hydrogen desorption from the H-saturated Si(100) surface was investigated as a function of annealing temperatures. Our STM results suggest that the desorbing H2 molecules are formed by two hydrogen atoms on the same dihydride species.

    Original languageEnglish
    Pages (from-to)203-209
    Number of pages7
    JournalApplied Physics A Solids and Surfaces
    Issue number2
    Publication statusPublished - 1994 Feb


    • 61.16.Ch
    • 68.35.Bs

    ASJC Scopus subject areas

    • Materials Science(all)
    • Engineering(all)
    • Physics and Astronomy (miscellaneous)


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