Integration process development for improved compatibility with organic non-porous ultralow-k dielectric fluorocarbon on advanced Cu interconnects

Integration of an organic non-porous ultralow-k dielectric, fluorocarbon (k = 2:2), into advanced Cu interconnects was demonstrated. The challenges of process-induced damage, such as delamination and variances of both the structure and electrical properties of the fluorocarbon during fabrication, were investigated on Cu/fluorocarbon damascene interconnects. A titanium-based barrier layer, instead of a tantalum-based barrier layer, was used to avoid delamination between Cu and fluorocarbon in Cu/fluorocarbon interconnects. A moisture-hermetic dielectric protective layer was also effective to avoid damage induced by wet chemical cleaning. On the other hand, a post-etching nitrogen plasma treatment to form a stable protective layer on the surface of the fluorocarbon was proposed for the practical minimization of damage introduction to fluorocarbon in the following damascene process, such as post-etching cleaning.