TY - JOUR
T1 - Integration process development for improved compatibility with organic non-porous ultralow-k dielectric fluorocarbon on advanced Cu interconnects
AU - Gu, Xun
AU - Tomita, Yugo
AU - Nemoto, Takenao
AU - Miyatani, Kotaro
AU - Saito, Akane
AU - Kobayashi, Yasuo
AU - Teramoto, Akinobu
AU - Kuroda, Rihito
AU - Kuroki, Shin Ichiro
AU - Kawase, Kazumasa
AU - Nozawa, Toshihisa
AU - Matsuoka, Takaaki
AU - Sugawa, Shigetoshi
AU - Ohmi, Tadahiro
PY - 2012/5/1
Y1 - 2012/5/1
N2 - Integration of an organic non-porous ultralow-k dielectric, fluorocarbon (k = 2:2), into advanced Cu interconnects was demonstrated. The challenges of process-induced damage, such as delamination and variances of both the structure and electrical properties of the fluorocarbon during fabrication, were investigated on Cu/fluorocarbon damascene interconnects. A titanium-based barrier layer, instead of a tantalum-based barrier layer, was used to avoid delamination between Cu and fluorocarbon in Cu/fluorocarbon interconnects. A moisture-hermetic dielectric protective layer was also effective to avoid damage induced by wet chemical cleaning. On the other hand, a post-etching nitrogen plasma treatment to form a stable protective layer on the surface of the fluorocarbon was proposed for the practical minimization of damage introduction to fluorocarbon in the following damascene process, such as post-etching cleaning.
AB - Integration of an organic non-porous ultralow-k dielectric, fluorocarbon (k = 2:2), into advanced Cu interconnects was demonstrated. The challenges of process-induced damage, such as delamination and variances of both the structure and electrical properties of the fluorocarbon during fabrication, were investigated on Cu/fluorocarbon damascene interconnects. A titanium-based barrier layer, instead of a tantalum-based barrier layer, was used to avoid delamination between Cu and fluorocarbon in Cu/fluorocarbon interconnects. A moisture-hermetic dielectric protective layer was also effective to avoid damage induced by wet chemical cleaning. On the other hand, a post-etching nitrogen plasma treatment to form a stable protective layer on the surface of the fluorocarbon was proposed for the practical minimization of damage introduction to fluorocarbon in the following damascene process, such as post-etching cleaning.
UR - http://www.scopus.com/inward/record.url?scp=84860230131&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84860230131&partnerID=8YFLogxK
U2 - 10.1143/JJAP.51.05EC03
DO - 10.1143/JJAP.51.05EC03
M3 - Article
AN - SCOPUS:84860230131
VL - 51
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5 PART 2
M1 - 05EC03
ER -