Integration process development for improved compatibility with organic non-porous ultralow-k dielectric fluorocarbon on advanced Cu interconnects

Xun Gu, Yugo Tomita, Takenao Nemoto, Kotaro Miyatani, Akane Saito, Yasuo Kobayashi, Akinobu Teramoto, Rihito Kuroda, Shin Ichiro Kuroki, Kazumasa Kawase, Toshihisa Nozawa, Takaaki Matsuoka, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Integration of an organic non-porous ultralow-k dielectric, fluorocarbon (k = 2:2), into advanced Cu interconnects was demonstrated. The challenges of process-induced damage, such as delamination and variances of both the structure and electrical properties of the fluorocarbon during fabrication, were investigated on Cu/fluorocarbon damascene interconnects. A titanium-based barrier layer, instead of a tantalum-based barrier layer, was used to avoid delamination between Cu and fluorocarbon in Cu/fluorocarbon interconnects. A moisture-hermetic dielectric protective layer was also effective to avoid damage induced by wet chemical cleaning. On the other hand, a post-etching nitrogen plasma treatment to form a stable protective layer on the surface of the fluorocarbon was proposed for the practical minimization of damage introduction to fluorocarbon in the following damascene process, such as post-etching cleaning.

Original languageEnglish
Article number05EC03
JournalJapanese journal of applied physics
Volume51
Issue number5 PART 2
DOIs
Publication statusPublished - 2012 May 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Gu, X., Tomita, Y., Nemoto, T., Miyatani, K., Saito, A., Kobayashi, Y., Teramoto, A., Kuroda, R., Kuroki, S. I., Kawase, K., Nozawa, T., Matsuoka, T., Sugawa, S., & Ohmi, T. (2012). Integration process development for improved compatibility with organic non-porous ultralow-k dielectric fluorocarbon on advanced Cu interconnects. Japanese journal of applied physics, 51(5 PART 2), [05EC03]. https://doi.org/10.1143/JJAP.51.05EC03