Integration of single/double vertical-cavity devices by mask molecular beam epitaxy

Hideaki Saito, Hideo Kosaka, Yoshimasa Sugimoto, Kenichi Kasahara

Research output: Contribution to journalArticlepeer-review

Abstract

We have developed a new mask molecular beam epitaxy (MBE) technique that allows successive selective and non-selective growth to be carried out in a chamber using a movable mask. Grown layers have high crystal quality without contamination. This technique is used to monolithically integrate vertical-cavity surface-emitting lasers and double vertical-cavity photodetectors used for optical interconnections. A low threshold current is obtained in the surface-emitting laser and a large bandwidth is obtained in the photodetector.

Original languageEnglish
Pages (from-to)1318-1322
Number of pages5
JournalJournal of Crystal Growth
Volume150
DOIs
Publication statusPublished - 1995 Jan 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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