Abstract
We have developed a new mask molecular beam epitaxy (MBE) technique that allows successive selective and non-selective growth to be carried out in a chamber using a movable mask. Grown layers have high crystal quality without contamination. This technique is used to monolithically integrate vertical-cavity surface-emitting lasers and double vertical-cavity photodetectors used for optical interconnections. A low threshold current is obtained in the surface-emitting laser and a large bandwidth is obtained in the photodetector.
Original language | English |
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Pages (from-to) | 1318-1322 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 150 |
DOIs | |
Publication status | Published - 1995 Jan 1 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry