@article{006ace9cea4541d582f57a917cc4fffa,
title = "Integration of High-Frequency Carrier-Type Thin-Film Magnetic Field Sensor with SmCo Thin-Film Bias Magnet",
abstract = "A bridge-connected high-frequency carrier-type thin-film magnetic field sensor is fabricated on a SmCo magnetic thin-film which provides an in-plane dc bias magnetic field to the sensor. The dc bias field of 320 A/m was achieved by using a 3 imi thick SmCo underlayer. The sensitivity obtained was 8. 4 mV/Oe which was 12 times as large as the sensitivity without the SmCo thin-film magnet.",
keywords = "Gmi sensor, Highfrequency carrier-type thin-film magnetic field sensor, Non-uniform bridge-connected sensor, Smco thin-film magnet",
author = "M. Takezawa and Kim, {Y. H.} and K. Ishiyama and M. Baba and N. Ajiro and M. Yamaguchi and Arai, {K. I.}",
note = "Funding Information: Mariiiscript received March 5, 1999. M. 'Ttikezawa, +81-22-217-5488, fax +El-22-217-5489, take0 riec.tohoku.oc.jp; Y. H. Kim, kimyh0 riec.tohoku.acjp; K. Ishiyama, ishiyamaa riec.toiiokii.x.jp; M. Baba, baba0 riec.tohoku.ac.jp; N. Ajiro, ajiro@ riec.tohoku.ac.jp; M. Yamaguchi, yamagutie rioc.tohoku.ac.jp; K. I. Ami, phone +81-22-217-5487, fax +81-22-217.5490, ami@ riec.tohoku.ac.jp; N. Wako, +El-22-308-0024, fax +81-22-308-1149,n aoki.wako@ tok.tokin.cojp; 1. Abe, iwaoabe0 sen.tokin.co.jp; This study was partially supported by the Program for Promotion of Fundamental Studies in lleaith Sciences of the Orgariimtiori for Drug ADR Relief, R & D Promotion and Product Review of Japan arid by Joint-Resoarch Project Cor Regional Intensive of Miyagi prefecture Japan.",
year = "1999",
doi = "10.1109/20.800630",
language = "English",
volume = "35",
pages = "3682--3684",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5 PART 2",
}