Integration of grating-image-type encoder using Si micromachining

K. Hane; T. Endo; M. Ishimori; Y. Ito; M. Sasaki

doi:10.1016/S0924-4247(01)00800-7

Integration of grating-image-type encoder using Si micromachining

K. Hane, T. Endo, M. Ishimori, Y. Ito, M. Sasaki

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Conference article › peer-review

30 Citations (Scopus)

Abstract

Integration of a grating-image-type encoder is proposed and the sensor for the encoder has been fabricated using Si micromachining technology. The sensor consists of the Si grids with line photodiodes, light emitting diode (LED) and signal amplifier. The Si grids works as the photodetectors as well as the object and index gratings. The incoherent light emission through the Si grids and the light detection with the grids make the optical system compact. Phase change of the signal is caused by the translation of the grating image on the Si grids. Two phase-shifted signals are generated by installing two sets of photodiodes on the Si substrate with a corresponding spatial displacement. Two types of grating structures are fabricated for the practical sensors. The signal contrast is high enough for the displacement measurements at a large air gap.

Original language	English
Pages (from-to)	139-146
Number of pages	8
Journal	Sensors and Actuators, A: Physical
Volume	97-98
DOIs	https://doi.org/10.1016/S0924-4247(01)00800-7
Publication status	Published - 2002 Apr 1
Event	Transducers'01 Eurosensors XV - Munich, Germany Duration: 2001 Jun 10 → 2001 Jun 14

Keywords

Displacement sensing
Encoder
Grating
Optical sensor
Si micromachining

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/S0924-4247(01)00800-7

Cite this

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title = "Integration of grating-image-type encoder using Si micromachining",

abstract = "Integration of a grating-image-type encoder is proposed and the sensor for the encoder has been fabricated using Si micromachining technology. The sensor consists of the Si grids with line photodiodes, light emitting diode (LED) and signal amplifier. The Si grids works as the photodetectors as well as the object and index gratings. The incoherent light emission through the Si grids and the light detection with the grids make the optical system compact. Phase change of the signal is caused by the translation of the grating image on the Si grids. Two phase-shifted signals are generated by installing two sets of photodiodes on the Si substrate with a corresponding spatial displacement. Two types of grating structures are fabricated for the practical sensors. The signal contrast is high enough for the displacement measurements at a large air gap.",

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TY - JOUR

T1 - Integration of grating-image-type encoder using Si micromachining

AU - Hane, K.

AU - Endo, T.

AU - Ishimori, M.

AU - Ito, Y.

AU - Sasaki, M.

PY - 2002/4/1

Y1 - 2002/4/1

N2 - Integration of a grating-image-type encoder is proposed and the sensor for the encoder has been fabricated using Si micromachining technology. The sensor consists of the Si grids with line photodiodes, light emitting diode (LED) and signal amplifier. The Si grids works as the photodetectors as well as the object and index gratings. The incoherent light emission through the Si grids and the light detection with the grids make the optical system compact. Phase change of the signal is caused by the translation of the grating image on the Si grids. Two phase-shifted signals are generated by installing two sets of photodiodes on the Si substrate with a corresponding spatial displacement. Two types of grating structures are fabricated for the practical sensors. The signal contrast is high enough for the displacement measurements at a large air gap.

AB - Integration of a grating-image-type encoder is proposed and the sensor for the encoder has been fabricated using Si micromachining technology. The sensor consists of the Si grids with line photodiodes, light emitting diode (LED) and signal amplifier. The Si grids works as the photodetectors as well as the object and index gratings. The incoherent light emission through the Si grids and the light detection with the grids make the optical system compact. Phase change of the signal is caused by the translation of the grating image on the Si grids. Two phase-shifted signals are generated by installing two sets of photodiodes on the Si substrate with a corresponding spatial displacement. Two types of grating structures are fabricated for the practical sensors. The signal contrast is high enough for the displacement measurements at a large air gap.

KW - Displacement sensing

KW - Encoder

KW - Grating

KW - Optical sensor

KW - Si micromachining

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JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

T2 - Transducers'01 Eurosensors XV

Y2 - 10 June 2001 through 14 June 2001

ER -

Integration of grating-image-type encoder using Si micromachining

Abstract

Keywords

ASJC Scopus subject areas

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