Integration of Boron-Doped Diamond Microelectrode on CMOS-Based Amperometric Sensor Array by Film Transfer Technology

Takeshi Hayasaka, Shinya Yoshida, Kumi Y. Inoue, Masanori Nakano, Tomokazu Matsue, Masayoshi Esashi, Shuji Tanaka

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


This paper reports on the fabrication of a complementary metal oxide semiconductor (CMOS)-based 20\times 20 amperometric sensor array integrated with boron-doped diamond (BDD) microelectrodes. The BDD electrodes were formed on a Si wafer at 800 °C, and then transferred to a 0.18 \mu m CMOS large-scale integration (LSI) wafer with a benzocyclobutene bonding interlayer. As a result, the BDD microelectrodes were arrayed without significant damage to CMOS circuit or BDD electrodes. The integrated BDD electrodes on the CMOS LSI exhibited excellent performance for electrochemical analysis. The wider potential window and smaller background current compared with Au microelectrodes were experimentally verified. The electron transfer rate to ferrocenemethanol as a standard reagent was large. The fully implemented device successfully detected 100-nm histamine, and was used for the 2-D real-time imaging of histamine diffused in a solution. [2014-0188]

Original languageEnglish
Article number6919996
Pages (from-to)958-967
Number of pages10
JournalJournal of Microelectromechanical Systems
Issue number4
Publication statusPublished - 2015 Aug 1


  • Amperometric sensor array
  • boron-doped diamond
  • chemical sensor
  • electrochemical biosensor
  • film transfer technology
  • heterogeneous integration
  • large-scale integration (LSI) integrated microelectromechanical systems (MEMS).

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering


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