Integration of a 0.13-μm CMOS and a high performance self-aligned SiGe HBT featuring low base resistance

Takashi Hashimoto, Yusuke Nonaka, Tomohiro Saito, Kyoko Sasahara, Tatsuya Tominari, Kouki Sakai, Kazuaki Tokunaga, Tsuyoshi Fujiwara, Shinichiro Wada, Tsutomu Udo, Tomoko Jinbo, Katsuyoshi Washio, Hideyuki Hosoe

Research output: Contribution to journalConference articlepeer-review

21 Citations (Scopus)


Without inducing any degradation of CMOS performance and reliability, a high performance self-aligned SiGe-HBT process was successfully integrated to a standard 0.13-μm CMOS platform including dual gate oxides and five layers of Al metallization. Suppressing moisture elimination from a wafer surface is a key for reducing thermal budgets during the SiGe HBT formation process. We found that a heavily boron-doped intrinsic base that is highly activated by 1000-°C RTA improved HBT performance with low rbb' of 82 ω and high fT/ fmax of 122/178 GHz.

Original languageEnglish
Pages (from-to)779-782
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2002
Externally publishedYes
Event2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States
Duration: 2002 Dec 82002 Dec 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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