Integration of a 0.13-μm CMOS and a high performance self-aligned SiGe HBT featuring low base resistance

Takashi Hashimoto; Yusuke Nonaka; Tomohiro Saito; Kyoko Sasahara; Tatsuya Tominari; Kouki Sakai; Kazuaki Tokunaga; Tsuyoshi Fujiwara; Shinichiro Wada; Tsutomu Udo; Tomoko Jinbo; Katsuyoshi Washio; Hideyuki Hosoe

Integration of a 0.13-μm CMOS and a high performance self-aligned SiGe HBT featuring low base resistance

Takashi Hashimoto, Yusuke Nonaka, Tomohiro Saito, Kyoko Sasahara, Tatsuya Tominari, Kouki Sakai, Kazuaki Tokunaga, Tsuyoshi Fujiwara, Shinichiro Wada, Tsutomu Udo, Tomoko Jinbo, Katsuyoshi Washio, Hideyuki Hosoe

Research output: Contribution to journal › Conference article › peer-review

21 Citations (Scopus)

Abstract

Without inducing any degradation of CMOS performance and reliability, a high performance self-aligned SiGe-HBT process was successfully integrated to a standard 0.13-μm CMOS platform including dual gate oxides and five layers of Al metallization. Suppressing moisture elimination from a wafer surface is a key for reducing thermal budgets during the SiGe HBT formation process. We found that a heavily boron-doped intrinsic base that is highly activated by 1000-°C RTA improved HBT performance with low r_bb' of 82 ω and high f_T/ f_max of 122/178 GHz.

Original language	English
Pages (from-to)	779-782
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2002
Externally published	Yes
Event	2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States Duration: 2002 Dec 8 → 2002 Dec 11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Integration of a 0.13-μm CMOS and a high performance self-aligned SiGe HBT featuring low base resistance",

abstract = "Without inducing any degradation of CMOS performance and reliability, a high performance self-aligned SiGe-HBT process was successfully integrated to a standard 0.13-μm CMOS platform including dual gate oxides and five layers of Al metallization. Suppressing moisture elimination from a wafer surface is a key for reducing thermal budgets during the SiGe HBT formation process. We found that a heavily boron-doped intrinsic base that is highly activated by 1000-°C RTA improved HBT performance with low rbb' of 82 ω and high fT/ fmax of 122/178 GHz.",

author = "Takashi Hashimoto and Yusuke Nonaka and Tomohiro Saito and Kyoko Sasahara and Tatsuya Tominari and Kouki Sakai and Kazuaki Tokunaga and Tsuyoshi Fujiwara and Shinichiro Wada and Tsutomu Udo and Tomoko Jinbo and Katsuyoshi Washio and Hideyuki Hosoe",

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T1 - Integration of a 0.13-μm CMOS and a high performance self-aligned SiGe HBT featuring low base resistance

AU - Hashimoto, Takashi

AU - Nonaka, Yusuke

AU - Saito, Tomohiro

AU - Sasahara, Kyoko

AU - Tominari, Tatsuya

AU - Sakai, Kouki

AU - Tokunaga, Kazuaki

AU - Fujiwara, Tsuyoshi

AU - Wada, Shinichiro

AU - Udo, Tsutomu

AU - Jinbo, Tomoko

AU - Washio, Katsuyoshi

AU - Hosoe, Hideyuki

PY - 2002

Y1 - 2002

N2 - Without inducing any degradation of CMOS performance and reliability, a high performance self-aligned SiGe-HBT process was successfully integrated to a standard 0.13-μm CMOS platform including dual gate oxides and five layers of Al metallization. Suppressing moisture elimination from a wafer surface is a key for reducing thermal budgets during the SiGe HBT formation process. We found that a heavily boron-doped intrinsic base that is highly activated by 1000-°C RTA improved HBT performance with low rbb' of 82 ω and high fT/ fmax of 122/178 GHz.

AB - Without inducing any degradation of CMOS performance and reliability, a high performance self-aligned SiGe-HBT process was successfully integrated to a standard 0.13-μm CMOS platform including dual gate oxides and five layers of Al metallization. Suppressing moisture elimination from a wafer surface is a key for reducing thermal budgets during the SiGe HBT formation process. We found that a heavily boron-doped intrinsic base that is highly activated by 1000-°C RTA improved HBT performance with low rbb' of 82 ω and high fT/ fmax of 122/178 GHz.

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M3 - Conference article

AN - SCOPUS:0036927523

SN - 0163-1918

SP - 779

EP - 782

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 2002 IEEE International Devices Meeting (IEDM)

Y2 - 8 December 2002 through 11 December 2002

ER -

Integration of a 0.13-μm CMOS and a high performance self-aligned SiGe HBT featuring low base resistance

Abstract

ASJC Scopus subject areas

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