TY - GEN
T1 - Integrated fluorescent analysis system with monolithic GaN light emitting diode on Si platform
AU - Nakazato, H.
AU - Kawaguchi, H.
AU - Iwabuchi, A.
AU - Hane, Kazuhiro
PY - 2012/5/7
Y1 - 2012/5/7
N2 - A GaN blue light emitting diode (LED) integrated monolithically on a Si substrate is used as a fluorescent light source of bio-fluidic micro total analysis system (μTAS) with polydimethylsiloxane (PDMS) channel. A Si photodiode (Si PD) is also installed on a Si substrate for fluorescent detection. Therefore, all basic optical components necessary for fluorescent μTAS are integrated on a Si platform. A GaN LED layer on a Si substrate is micromachined by etching the Si substrate to generate a ring-shaped light source for a dark-illumination optical configuration. The blue emission at the wavelength of 477nm suits the excitation of the fluorescent dye of fluorescein isothiocyanate (FITC). Using the integrated chip, the fluorescent emission form a flowing fluid with the dye is measured as a function of the concentration. The noise, sensitivity and detection limit are evaluated to be 0.57pA, 1.21pA/μM and 469nM, respectively.
AB - A GaN blue light emitting diode (LED) integrated monolithically on a Si substrate is used as a fluorescent light source of bio-fluidic micro total analysis system (μTAS) with polydimethylsiloxane (PDMS) channel. A Si photodiode (Si PD) is also installed on a Si substrate for fluorescent detection. Therefore, all basic optical components necessary for fluorescent μTAS are integrated on a Si platform. A GaN LED layer on a Si substrate is micromachined by etching the Si substrate to generate a ring-shaped light source for a dark-illumination optical configuration. The blue emission at the wavelength of 477nm suits the excitation of the fluorescent dye of fluorescein isothiocyanate (FITC). Using the integrated chip, the fluorescent emission form a flowing fluid with the dye is measured as a function of the concentration. The noise, sensitivity and detection limit are evaluated to be 0.57pA, 1.21pA/μM and 469nM, respectively.
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U2 - 10.1109/MEMSYS.2012.6170317
DO - 10.1109/MEMSYS.2012.6170317
M3 - Conference contribution
AN - SCOPUS:84860424904
SN - 9781467303248
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 842
EP - 845
BT - 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
T2 - 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
Y2 - 29 January 2012 through 2 February 2012
ER -