Integrated Double Heterostructure Ga0.47In0.53As Photoreceiver with Automatic Gain Control

Joseph Barnard, Colin E.C. Wood, Lester F. Eastman, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

The first operation of an integrated differential notch-type photoconductor and dual gate (DG) double heterostructure (DH) MESFET in Ga0.47In0.53As is reported. The starting material was grown by molecular beam epitaxy on a semi-insulating InP substrate. A 2 mW HeNe laser with a spot diameter of 0.5 mm could modulate the drain current by 300 µA with the upper gate suitably biased.

Original languageEnglish
Pages (from-to)7-9
Number of pages3
JournalIEEE Electron Device Letters
Volume2
Issue number1
DOIs
Publication statusPublished - 1981 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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