The first operation of an integrated differential notch-type photoconductor and dual gate (DG) double heterostructure (DH) MESFET in Ga0.47In0.53As is reported. The starting material was grown by molecular beam epitaxy on a semi-insulating InP substrate. A 2 mW HeNe laser with a spot diameter of 0.5 mm could modulate the drain current by 300 µA with the upper gate suitably biased.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering