Insulator-to-Metal Transition of Cr2O3Thin Films via Isovalent Ru3+Substitution

Kohei Fujiwara, Miho Kitamura, Daisuke Shiga, Yasuhiro Niwa, Koji Horiba, Tsutomu Nojima, Hiromichi Ohta, Hiroshi Kumigashira, Atsushi Tsukazaki

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


In transition-metal oxides, the vast combinations of crystal structures and metal ions provide a fertile ground for tailoring their electronic properties. Using a thin-film growth technique creates an additional interface-related degree of freedom in the artificial heterostructures. However, in corundum-type and crystallographically related ternary compounds, the scarcity of oxides applicable to a lattice-matched electrode layer often impedes the electrical characterization of these heterostructures. Here, we report the synthesis of a thin film of a new corundum-type oxide that exhibits metallic conduction. By substituting Ru into the antiferromagnetic insulator Cr2O3 via pulsed laser deposition, we fabricated thin films of (Cr1-xRux)2O3 not known in bulk. The structural, electrical, and magnetic characterizations showed that the antiferromagnetic insulator became a paramagnetic metal at Ru contents x greater than approximately 0.40 while preserving the host corundum structure. Spectroscopic analyses revealed the formation of Ru 4d-derived bands at the Fermi level and the presence of Ru3+, which is a valence state of Ru rarely observed in oxides. The stabilization of the unusual Ru3+ state is attributed to the charge neutrality constraint in the robust Cr2O3-based framework as well as the kinetics-driven vacuum deposition process.

Original languageEnglish
Pages (from-to)5272-5279
Number of pages8
JournalChemistry of Materials
Issue number12
Publication statusPublished - 2020 Jun 23

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry


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