Insulator-to-metal transition in ZnO by electric double layer gating

Hidekazu Shimotani, Haruhiko Asanuma, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki, Yoshihiro Iwasa

Research output: Contribution to journalArticlepeer-review

145 Citations (Scopus)

Abstract

The authors report high-density carrier accumulation and a gate-induced insulator-to-metal transition in ZnO single-crystalline thin-film field effect transistors by adopting electric double layers as gate dielectrics. Hall effect measurements showed that a sheet carrier density of 4.2× 1013 cm-2 was achieved. The highest sheet conductance at room temperature was ∼1 mS, which was sufficient to maintain the metallic state down to 10 K. These results strongly suggest the versatility of electric double layer gating for various materials.

Original languageEnglish
Article number082106
JournalApplied Physics Letters
Volume91
Issue number8
DOIs
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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