Abstract
The tunnel magnetoresistance (TMR) effect in Co/Al-oxide/Co junctions was studied on a model exhibiting positive spin polarization, in which an Al monolayer is regarded as the terminating layer of the ferromagnetic electrode, and the s electron of Al behaves as the tunnel electron. In this model, the TMR ratio decreases when an insulator becomes ultrathin. It was shown that the decrease originates from an increase in the self-energy corrections due to the electrodes with parallel magnetization configuration.
| Original language | English |
|---|---|
| Pages (from-to) | 3986-3988 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 79 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2001 Dec 10 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Kokado, S., Ichimura, M., Onogi, T., Sakuma, A., Arai, R., Hayakawa, J., Ito, K., & Suzuki, Y. (2001). Insulator thickness dependence of tunnel magnetoresistance effect in a model of Co/Al-oxide/Co junctions. Applied Physics Letters, 79(24), 3986-3988. https://doi.org/10.1063/1.1424467