Insulator thickness dependence of tunnel magnetoresistance effect in a model of Co/Al-oxide/Co junctions

Satoshi Kokado, Masahiko Ichimura, Toshiyuki Onogi, Akimasa Sakuma, Reiko Arai, Jun Hayakawa, Kenchi Ito, Yoshio Suzuki

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The tunnel magnetoresistance (TMR) effect in Co/Al-oxide/Co junctions was studied on a model exhibiting positive spin polarization, in which an Al monolayer is regarded as the terminating layer of the ferromagnetic electrode, and the s electron of Al behaves as the tunnel electron. In this model, the TMR ratio decreases when an insulator becomes ultrathin. It was shown that the decrease originates from an increase in the self-energy corrections due to the electrodes with parallel magnetization configuration.

Original languageEnglish
Pages (from-to)3986-3988
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number24
DOIs
Publication statusPublished - 2001 Dec 10

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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