Insulator thickness dependence of tunnel magnetoresistance effect in a model of Co/Al-oxide/Co junctions

Satoshi Kokado; Masahiko Ichimura; Toshiyuki Onogi; Akimasa Sakuma; Reiko Arai; Jun Hayakawa; Kenchi Ito; Yoshio Suzuki

doi:10.1063/1.1424467

Insulator thickness dependence of tunnel magnetoresistance effect in a model of Co/Al-oxide/Co junctions

Satoshi Kokado, Masahiko Ichimura, Toshiyuki Onogi, Akimasa Sakuma, Reiko Arai, Jun Hayakawa, Kenchi Ito, Yoshio Suzuki

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The tunnel magnetoresistance (TMR) effect in Co/Al-oxide/Co junctions was studied on a model exhibiting positive spin polarization, in which an Al monolayer is regarded as the terminating layer of the ferromagnetic electrode, and the s electron of Al behaves as the tunnel electron. In this model, the TMR ratio decreases when an insulator becomes ultrathin. It was shown that the decrease originates from an increase in the self-energy corrections due to the electrodes with parallel magnetization configuration.

Original language	English
Pages (from-to)	3986-3988
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	24
DOIs	https://doi.org/10.1063/1.1424467
Publication status	Published - 2001 Dec 10
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1424467

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Insulator thickness dependence of tunnel magnetoresistance effect in a model of Co/Al-oxide/Co junctions. / Kokado, Satoshi; Ichimura, Masahiko; Onogi, Toshiyuki; Sakuma, Akimasa; Arai, Reiko; Hayakawa, Jun; Ito, Kenchi; Suzuki, Yoshio.

In: Applied Physics Letters, Vol. 79, No. 24, 10.12.2001, p. 3986-3988.

Research output: Contribution to journal › Article › peer-review

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abstract = "The tunnel magnetoresistance (TMR) effect in Co/Al-oxide/Co junctions was studied on a model exhibiting positive spin polarization, in which an Al monolayer is regarded as the terminating layer of the ferromagnetic electrode, and the s electron of Al behaves as the tunnel electron. In this model, the TMR ratio decreases when an insulator becomes ultrathin. It was shown that the decrease originates from an increase in the self-energy corrections due to the electrodes with parallel magnetization configuration.",

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AU - Sakuma, Akimasa

AU - Arai, Reiko

AU - Hayakawa, Jun

AU - Ito, Kenchi

AU - Suzuki, Yoshio

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N2 - The tunnel magnetoresistance (TMR) effect in Co/Al-oxide/Co junctions was studied on a model exhibiting positive spin polarization, in which an Al monolayer is regarded as the terminating layer of the ferromagnetic electrode, and the s electron of Al behaves as the tunnel electron. In this model, the TMR ratio decreases when an insulator becomes ultrathin. It was shown that the decrease originates from an increase in the self-energy corrections due to the electrodes with parallel magnetization configuration.

AB - The tunnel magnetoresistance (TMR) effect in Co/Al-oxide/Co junctions was studied on a model exhibiting positive spin polarization, in which an Al monolayer is regarded as the terminating layer of the ferromagnetic electrode, and the s electron of Al behaves as the tunnel electron. In this model, the TMR ratio decreases when an insulator becomes ultrathin. It was shown that the decrease originates from an increase in the self-energy corrections due to the electrodes with parallel magnetization configuration.

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Insulator thickness dependence of tunnel magnetoresistance effect in a model of Co/Al-oxide/Co junctions

Abstract

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