Insulator-metal transition in Sm1-xSrxMnO3 films

Tomohiro Kubota; Yuko Saya; Maki Kawai; Masayuki Hagiwara; Hiroko Aruga Katori; Tomohiro Yamaguchi

doi:10.1016/S0022-3697(02)00142-7

Insulator-metal transition in Sm_1-xSr_xMnO₃ films

Tomohiro Kubota, Yuko Saya, Maki Kawai, Masayuki Hagiwara, Hiroko Aruga Katori, Tomohiro Yamaguchi

Innovative Energy Research Center

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Transport and magnetic properties of Sm_1-xSr_xMnO₃ (x = 0.40, 0.45, and 0.50) thin films fabricated using pulsed laser deposition method (PLD) have been investigated. We found that the insulator-metal (IM) transition similar to those for single crystal samples was achieved by annealing in air and other gases, while as-grown films were insulative in the whole temperature range. From XRD and resistivity measurements, we found that the IM transition takes place due to the release of lattice distortion, not due to modification of oxygen concentration in the samples.

Original language	English
Pages (from-to)	943-946
Number of pages	4
Journal	Journal of Physics and Chemistry of Solids
Volume	63
Issue number	6-8
DOIs	https://doi.org/10.1016/S0022-3697(02)00142-7
Publication status	Published - 2002 Jan 1

Keywords

A. Thin films
B. Epitaxial growth
D. Magnetic properties
D. Phase transitions
D. Transport properties

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1016/S0022-3697(02)00142-7

Cite this

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title = "Insulator-metal transition in Sm1-xSrxMnO3 films",

abstract = "Transport and magnetic properties of Sm1-xSrxMnO3 (x = 0.40, 0.45, and 0.50) thin films fabricated using pulsed laser deposition method (PLD) have been investigated. We found that the insulator-metal (IM) transition similar to those for single crystal samples was achieved by annealing in air and other gases, while as-grown films were insulative in the whole temperature range. From XRD and resistivity measurements, we found that the IM transition takes place due to the release of lattice distortion, not due to modification of oxygen concentration in the samples.",

keywords = "A. Thin films, B. Epitaxial growth, D. Magnetic properties, D. Phase transitions, D. Transport properties",

author = "Tomohiro Kubota and Yuko Saya and Maki Kawai and Masayuki Hagiwara and Katori, {Hiroko Aruga} and Tomohiro Yamaguchi",

year = "2002",

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T1 - Insulator-metal transition in Sm1-xSrxMnO3 films

AU - Kubota, Tomohiro

AU - Saya, Yuko

AU - Kawai, Maki

AU - Hagiwara, Masayuki

AU - Katori, Hiroko Aruga

AU - Yamaguchi, Tomohiro

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Transport and magnetic properties of Sm1-xSrxMnO3 (x = 0.40, 0.45, and 0.50) thin films fabricated using pulsed laser deposition method (PLD) have been investigated. We found that the insulator-metal (IM) transition similar to those for single crystal samples was achieved by annealing in air and other gases, while as-grown films were insulative in the whole temperature range. From XRD and resistivity measurements, we found that the IM transition takes place due to the release of lattice distortion, not due to modification of oxygen concentration in the samples.

AB - Transport and magnetic properties of Sm1-xSrxMnO3 (x = 0.40, 0.45, and 0.50) thin films fabricated using pulsed laser deposition method (PLD) have been investigated. We found that the insulator-metal (IM) transition similar to those for single crystal samples was achieved by annealing in air and other gases, while as-grown films were insulative in the whole temperature range. From XRD and resistivity measurements, we found that the IM transition takes place due to the release of lattice distortion, not due to modification of oxygen concentration in the samples.

KW - A. Thin films

KW - B. Epitaxial growth

KW - D. Magnetic properties

KW - D. Phase transitions

KW - D. Transport properties

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