Insulating phase of a two-dimensional electron gas in MgxZn 1-xO/ZnO heterostructures below ν=13

Y. Kozuka, A. Tsukazaki, D. Maryenko, J. Falson, S. Akasaka, K. Nakahara, S. Nakamura, S. Awaji, K. Ueno, M. Kawasaki

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

We report magnetotransport properties of a two-dimensional electron gas confined at MgZnO/ZnO heterointerface in a high magnetic field up to 26 T. High electron mobility and low charge carrier density enabled the observation of the fractional quantum Hall state ν = 1/3. For an even lower charge carrier density, we observe a transition from quantum Hall liquid to an insulator below the filling factor 1/3. Because of the large electron effective mass in ZnO, we suggest the MgZnO/ZnO heterostructures to be a prototype system for highly correlated quantum Hall physics.

Original languageEnglish
Article number033304
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number3
DOIs
Publication statusPublished - 2011 Jul 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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