In0.53ga0.47as/inp multiquantum well lasers grown by metalorganic molecular beam epitaxy (mombe)

Hideo Sugiura, Yoshio Noguchi, Ryuzo Iga, Takeshi Yamada, Hiroshi Yasaka

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Double-channel planar buried-heterostructure lasers with a multi-quantum well active layer are fabricated by a combination of MOMBE and liquid-phase epitaxy. The lasers exhibit room temperature cw operation at a threshold current of 30 mA and emit at a wavelength of 1.57 µm. The threshold currents of 70% of the laser chips tested are in the range of 30-35 mA. An originally designed MOMBE system with a diffusion-pumped growth chamber is also described.

Original languageEnglish
Pages (from-to)L286-L288
JournalJapanese journal of applied physics
Volume30
Issue number2B
DOIs
Publication statusPublished - 1991 Feb
Externally publishedYes

Keywords

  • Cw operation
  • DCPBH
  • InGaAs/InP MQW
  • Laser
  • MOMBE

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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