Instability of crystal/melt interface in Si-rich SiGe

M. Mokhtari, K. Fujiwara, G. Takakura, K. Maeda, Haruhiko Koizumi, J. Nozawa, S. Uda

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

An investigation was carried out into the instability of the crystal/melt interface in Si-rich SiGe, and the effects of the Ge concentration and growth velocity on the periodicity of zigzag facets at the interface were determined. It was found that the periodicity at the onset of instability became shorter with the increasing growth velocity and Ge concentration.

Original languageEnglish
Article number085104
JournalJournal of Applied Physics
Volume124
Issue number8
DOIs
Publication statusPublished - 2018 Aug 28

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Instability of crystal/melt interface in Si-rich SiGe'. Together they form a unique fingerprint.

Cite this