TY - JOUR
T1 - Insight into segregation sites for oxygen impurities at grain boundaries in silicon
AU - Ohno, Yutaka
AU - Ren, Jie
AU - Tanaka, Shingo
AU - Kohyama, Masanori
AU - Inoue, Koji
AU - Shimizu, Yasuo
AU - Nagai, Yasuyoshi
AU - Yoshida, Hideto
N1 - Publisher Copyright:
© 2021 The Japan Society of Applied Physics
PY - 2021/3
Y1 - 2021/3
N2 - The three-dimensional distribution of oxygen atoms segregated at Σ9{114} grain boundaries (GBs) in Czochralski-grown silicon ingots is analyzed within a high spatial resolution of less than 0.5 nm by atom probe tomography combined with a focused ion beam (FIB) operated at −150 °C. The analysis reveals a segregation of oxygen atoms within a range of 2.5 nm across the GB plane, which is much narrower in comparison with the previous reports obtained using a conventional FIB. The oxygen concentration profile accurately reflects the distribution of the segregation sites, which exist at bond-centered sites under tensile stresses above 2 GPa, as calculated by ab initio local stress calculations.
AB - The three-dimensional distribution of oxygen atoms segregated at Σ9{114} grain boundaries (GBs) in Czochralski-grown silicon ingots is analyzed within a high spatial resolution of less than 0.5 nm by atom probe tomography combined with a focused ion beam (FIB) operated at −150 °C. The analysis reveals a segregation of oxygen atoms within a range of 2.5 nm across the GB plane, which is much narrower in comparison with the previous reports obtained using a conventional FIB. The oxygen concentration profile accurately reflects the distribution of the segregation sites, which exist at bond-centered sites under tensile stresses above 2 GPa, as calculated by ab initio local stress calculations.
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U2 - 10.35848/1882-0786/abe80d
DO - 10.35848/1882-0786/abe80d
M3 - Article
AN - SCOPUS:85102647012
VL - 14
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 4
M1 - 041003
ER -