Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions

S. Miura, T. V.A. Nguyen, Y. Endoh, H. Sato, S. Ikeda, K. Nishioka, H. Honjo, T. Endoh

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We have studied the magnetic and electrical properties of double CoFeB-MgO interface magnetic tunnel junctions (MTJs) with various W insertion layer thicknesses tW annealed at 400 °C and evaluated tW dependence of thermal stability factor Δ, intrinsic critical current IC0 and damping constant α. It was found that spin-transfer torque efficiency (ΔIC0) values increased with decreasing tW as compared with the same MTJ size D. α measured by ferromagnetic resonance increased with an increase in tW, which is consistent with those calculated from ΔIC0. This result indicates that lower damping constant of MTJ with thin W insertion layer contributes to higher ΔIC0.

Original languageEnglish
Article number8674769
JournalIEEE Transactions on Magnetics
Volume55
Issue number7
DOIs
Publication statusPublished - 2019 Jul

Keywords

  • CoFeB-MgO
  • W insertion layer
  • damping constant
  • double interfaces structure
  • interfacial anisotropy
  • magnetic tunnel junction (MTJ)
  • spin-transfer torque magnetic random access memory (STT-MRAM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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