Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions

S. Miura; T. V.A. Nguyen; Y. Endoh; H. Sato; S. Ikeda; K. Nishioka; H. Honjo; T. Endoh

doi:10.1109/TMAG.2019.2901841

Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions

S. Miura, T. V.A. Nguyen, Y. Endoh, H. Sato, S. Ikeda, K. Nishioka, H. Honjo, T. Endoh

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have studied the magnetic and electrical properties of double CoFeB-MgO interface magnetic tunnel junctions (MTJs) with various W insertion layer thicknesses t_W annealed at 400 °C and evaluated t_W dependence of thermal stability factor Δ, intrinsic critical current I_C0 and damping constant α. It was found that spin-transfer torque efficiency (ΔI_C0) values increased with decreasing t_W as compared with the same MTJ size D. α measured by ferromagnetic resonance increased with an increase in t_W, which is consistent with those calculated from ΔI_C0. This result indicates that lower damping constant of MTJ with thin W insertion layer contributes to higher ΔI_C0.

Original language	English
Article number	8674769
Journal	IEEE Transactions on Magnetics
Volume	55
Issue number	7
DOIs	https://doi.org/10.1109/TMAG.2019.2901841
Publication status	Published - 2019 Jul

Keywords

CoFeB-MgO
W insertion layer
damping constant
double interfaces structure
interfacial anisotropy
magnetic tunnel junction (MTJ)
spin-transfer torque magnetic random access memory (STT-MRAM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions",

abstract = "We have studied the magnetic and electrical properties of double CoFeB-MgO interface magnetic tunnel junctions (MTJs) with various W insertion layer thicknesses tW annealed at 400 °C and evaluated tW dependence of thermal stability factor Δ, intrinsic critical current IC0 and damping constant α. It was found that spin-transfer torque efficiency (ΔIC0) values increased with decreasing tW as compared with the same MTJ size D. α measured by ferromagnetic resonance increased with an increase in tW, which is consistent with those calculated from ΔIC0. This result indicates that lower damping constant of MTJ with thin W insertion layer contributes to higher ΔIC0.",

keywords = "CoFeB-MgO, W insertion layer, damping constant, double interfaces structure, interfacial anisotropy, magnetic tunnel junction (MTJ), spin-transfer torque magnetic random access memory (STT-MRAM)",

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AU - Miura, S.

AU - Nguyen, T. V.A.

AU - Endoh, Y.

AU - Sato, H.

AU - Ikeda, S.

AU - Nishioka, K.

AU - Honjo, H.

AU - Endoh, T.

PY - 2019/7

Y1 - 2019/7

N2 - We have studied the magnetic and electrical properties of double CoFeB-MgO interface magnetic tunnel junctions (MTJs) with various W insertion layer thicknesses tW annealed at 400 °C and evaluated tW dependence of thermal stability factor Δ, intrinsic critical current IC0 and damping constant α. It was found that spin-transfer torque efficiency (ΔIC0) values increased with decreasing tW as compared with the same MTJ size D. α measured by ferromagnetic resonance increased with an increase in tW, which is consistent with those calculated from ΔIC0. This result indicates that lower damping constant of MTJ with thin W insertion layer contributes to higher ΔIC0.

AB - We have studied the magnetic and electrical properties of double CoFeB-MgO interface magnetic tunnel junctions (MTJs) with various W insertion layer thicknesses tW annealed at 400 °C and evaluated tW dependence of thermal stability factor Δ, intrinsic critical current IC0 and damping constant α. It was found that spin-transfer torque efficiency (ΔIC0) values increased with decreasing tW as compared with the same MTJ size D. α measured by ferromagnetic resonance increased with an increase in tW, which is consistent with those calculated from ΔIC0. This result indicates that lower damping constant of MTJ with thin W insertion layer contributes to higher ΔIC0.

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KW - W insertion layer

KW - damping constant

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KW - interfacial anisotropy

KW - magnetic tunnel junction (MTJ)

KW - spin-transfer torque magnetic random access memory (STT-MRAM)

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