Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions

S. Miura; T. V.A. Nguyen; Y. Endoh; Hideo Sato; S. Ikeda; K. Nishioka; H. Honjo; T. Endoh

doi:10.1109/TMAG.2019.2901841

Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions

S. Miura, T. V.A. Nguyen, Y. Endoh, Hideo Sato, S. Ikeda, K. Nishioka, H. Honjo, T. Endoh

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We have studied the magnetic and electrical properties of double CoFeB-MgO interface magnetic tunnel junctions (MTJs) with various W insertion layer thicknesses t_W annealed at 400 °C and evaluated t_W dependence of thermal stability factor Δ, intrinsic critical current I_C0 and damping constant α. It was found that spin-transfer torque efficiency (ΔI_C0) values increased with decreasing t_W as compared with the same MTJ size D. α measured by ferromagnetic resonance increased with an increase in t_W, which is consistent with those calculated from ΔI_C0. This result indicates that lower damping constant of MTJ with thin W insertion layer contributes to higher ΔI_C0.

Original language	English
Article number	8674769
Journal	IEEE Transactions on Magnetics
Volume	55
Issue number	7
DOIs	https://doi.org/10.1109/TMAG.2019.2901841
Publication status	Published - 2019 Jul

Keywords

CoFeB-MgO
W insertion layer
damping constant
double interfaces structure
interfacial anisotropy
magnetic tunnel junction (MTJ)
spin-transfer torque magnetic random access memory (STT-MRAM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2019.2901841

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title = "Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions",

abstract = "We have studied the magnetic and electrical properties of double CoFeB-MgO interface magnetic tunnel junctions (MTJs) with various W insertion layer thicknesses tW annealed at 400 °C and evaluated tW dependence of thermal stability factor Δ, intrinsic critical current IC0 and damping constant α. It was found that spin-transfer torque efficiency (ΔIC0) values increased with decreasing tW as compared with the same MTJ size D. α measured by ferromagnetic resonance increased with an increase in tW, which is consistent with those calculated from ΔIC0. This result indicates that lower damping constant of MTJ with thin W insertion layer contributes to higher ΔIC0.",

keywords = "CoFeB-MgO, W insertion layer, damping constant, double interfaces structure, interfacial anisotropy, magnetic tunnel junction (MTJ), spin-transfer torque magnetic random access memory (STT-MRAM)",

author = "S. Miura and Nguyen, {T. V.A.} and Y. Endoh and Hideo Sato and S. Ikeda and K. Nishioka and H. Honjo and T. Endoh",

note = "Funding Information: ACKNOWLEDGMENT This work was supported in part by CIES{\textquoteright}s Industrial Affiliation on STT MRAM Program, in part by CIES Consortium, JST ACCEL, Japan, under Grant JPMJAC1301, and in part by JST OPERA. Publisher Copyright: {\textcopyright} 1965-2012 IEEE.",

year = "2019",

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doi = "10.1109/TMAG.2019.2901841",

language = "English",

volume = "55",

journal = "IEEE Transactions on Magnetics",

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T1 - Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions

AU - Miura, S.

AU - Nguyen, T. V.A.

AU - Endoh, Y.

AU - Sato, Hideo

AU - Ikeda, S.

AU - Nishioka, K.

AU - Honjo, H.

AU - Endoh, T.

N1 - Funding Information: ACKNOWLEDGMENT This work was supported in part by CIES’s Industrial Affiliation on STT MRAM Program, in part by CIES Consortium, JST ACCEL, Japan, under Grant JPMJAC1301, and in part by JST OPERA. Publisher Copyright: © 1965-2012 IEEE.

PY - 2019/7

Y1 - 2019/7

N2 - We have studied the magnetic and electrical properties of double CoFeB-MgO interface magnetic tunnel junctions (MTJs) with various W insertion layer thicknesses tW annealed at 400 °C and evaluated tW dependence of thermal stability factor Δ, intrinsic critical current IC0 and damping constant α. It was found that spin-transfer torque efficiency (ΔIC0) values increased with decreasing tW as compared with the same MTJ size D. α measured by ferromagnetic resonance increased with an increase in tW, which is consistent with those calculated from ΔIC0. This result indicates that lower damping constant of MTJ with thin W insertion layer contributes to higher ΔIC0.

AB - We have studied the magnetic and electrical properties of double CoFeB-MgO interface magnetic tunnel junctions (MTJs) with various W insertion layer thicknesses tW annealed at 400 °C and evaluated tW dependence of thermal stability factor Δ, intrinsic critical current IC0 and damping constant α. It was found that spin-transfer torque efficiency (ΔIC0) values increased with decreasing tW as compared with the same MTJ size D. α measured by ferromagnetic resonance increased with an increase in tW, which is consistent with those calculated from ΔIC0. This result indicates that lower damping constant of MTJ with thin W insertion layer contributes to higher ΔIC0.

KW - CoFeB-MgO

KW - W insertion layer

KW - damping constant

KW - double interfaces structure

KW - interfacial anisotropy

KW - magnetic tunnel junction (MTJ)

KW - spin-transfer torque magnetic random access memory (STT-MRAM)

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DO - 10.1109/TMAG.2019.2901841

M3 - Article

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VL - 55

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 7

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ER -

Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions

Abstract

Keywords

ASJC Scopus subject areas

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