InP/InGaAsP p-type substrate and mass transported doubly buried heterostructure laser

Y. Noguchi, Y. Suzuki, T. Matsuoka, H. Nagai

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A novel InP/InGaAsP buried heterostructure laser diode on p-type InP substrate has been developed. The laser has achieved a threshold current as low as 20 mA DC with high power output of 50 mW under CW operation in the fundamental transverse mode.

Original languageEnglish
Pages (from-to)769-771
Number of pages3
JournalElectronics Letters
Volume20
Issue number19
DOIs
Publication statusPublished - 1984 Sep 13
Externally publishedYes

Keywords

  • Lasers and laser applications
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'InP/InGaAsP p-type substrate and mass transported doubly buried heterostructure laser'. Together they form a unique fingerprint.

  • Cite this