InP MISFET's with Plasma Anodic Al2O3 and Interlayed Native Oxide Gate Insulators

M. Matsui, Y. Hirayama, F. Arai, T. Sugano

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

InP MISFET's, with native oxide film interlayed between plasma anodic Al2O3 film and the InP substrate, has been fabricated and showed the instability of the drain current reduced less than ± 4 percent for the period of 5 μs ~ 5 × 104 s. The effective electron mobility is 2100 ~ 2600 cm2/V · s at room temperature. The CV characteristics of MIS diodes and AES in-depth profiles are also discussed with respect to effects of interlaying native oxide film on device characteristics.

Original languageEnglish
Pages (from-to)308-310
Number of pages3
JournalIEEE Electron Device Letters
Volume4
Issue number9
DOIs
Publication statusPublished - 1983 Sep
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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