InP HIGH MOBILITY ENHANCEMENT MISFETs USING ANODICALLY GROWN Al//2O//3-NATIVE OXIDE/InP INTERFACE.

Takayuki Sawada, Hideo Ohno, Hideki Hasegawa

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)
Original languageEnglish
Pages593
Number of pages1
Publication statusPublished - 1983
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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