InP-HEMT MMICs for passive millimeter-wave imaging sensors

M. Sato, T. Hirose, T. Ohki, T. Takahashi, K. Makiyama, N. Hara, H. Sato, K. Sawaya, K. Mizuno

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

This paper describes InP-HEMT MMICs for 94 GHz band passive millimeterwave (PMMW) imaging sensors. In order to obtain high sensitivity with a single MMIC, we developed a new structure in MMIC to suppress unwanted feedback power that causes amplifier instability. The structure is also suited for flip chip bonding (FCB). The measured sensitivity of the MMIC was over 500,000 V/W at the frequency of 94 GHz. We also developed the RF front-end of the PMMW imager by mounting the MMIC on an antenna substrate by FCB assembly. In addition, we demonstrated examples of a millimeter-wave image acquired by the PMMW imager.

Original languageEnglish
Title of host publication2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 - Versailles, France
Duration: 2008 May 25 → 2008 May 29

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

Other2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
CountryFrance
CityVersailles
Period08/5/25 → 08/5/29

Keywords

  • Flip chip bonding
  • HEMT
  • Inverted microstrip line
  • LNA
  • Linearly tapered slot antenna
  • PMMW

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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