A new chemical etching solution, saturated bromine water (SBW):n HBr:m H2O, has been developed for fabricating submicron patterns on InP and InGaAsP crystal surfaces. The fundamental characteristics, such as etching profiles, depth-to-undercutting etching ratio, and solution stability, are studied using an AZ photoresist mask. The composition of SBW:10 HBr:40 H20 is found to be suitable for the fabrication of an optical grating on InP and InGaAsP crystals. This new etchant permits the fabrication of high performance distributed feedback laser diodes at wavelengths near 1.3 and 1.5 μm.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry