InP- and GaAs-based plasmonic high-electron-mobility transistors for room-temperature ultrahigh-sensitive terahertz sensing and imaging

Takayuki Watanabe, Stephane Albon Boubanga Tombet, Yudai Tanimoto, Denis Fateev, Viacheslav Popov, Dominique Coquillat, Wojciech Knap, Yahya M. Meziani, Yuye Wang, Hiroaki Minamide, Hiromasa Ito, Taiichi Otsuji

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

This paper reviews recent advances in the design and performance of our original InP- and GaAs-based plasmonic high-electron-mobility transistors (HEMTs) for ultrahighlysensitive terahertz (THz) sensing and imaging. First, the fundamental theory of plasmonic THz detection is briefly described. Second, single-gate HEMTs with parasitic antennae are introduced as a basic core device structure, and their detection characteristics and sub-THz imaging potentialities are investigated. Third, dual-grating-gate (DGG)-HEMT structures are investigated for broadband highly sensitive detection of THz radiations, and the record sensitivity and the highly-sensitive THz imaging are demonstrated using the InP-based asymmetric DGG-HEMTs. Finally, the obtained results are summarized and future trends are addressed.

Original languageEnglish
Pages (from-to)89-99
Number of pages11
JournalIEEE Sensors Journal
Volume13
Issue number1
DOIs
Publication statusPublished - 2013 Jan

Keywords

  • Asymmetry
  • Detection
  • High-electron-mobility transistor (HEMT)
  • Imaging
  • Plasmon
  • Sensing
  • Terahertz

ASJC Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'InP- and GaAs-based plasmonic high-electron-mobility transistors for room-temperature ultrahigh-sensitive terahertz sensing and imaging'. Together they form a unique fingerprint.

  • Cite this

    Watanabe, T., Boubanga Tombet, S. A., Tanimoto, Y., Fateev, D., Popov, V., Coquillat, D., Knap, W., Meziani, Y. M., Wang, Y., Minamide, H., Ito, H., & Otsuji, T. (2013). InP- and GaAs-based plasmonic high-electron-mobility transistors for room-temperature ultrahigh-sensitive terahertz sensing and imaging. IEEE Sensors Journal, 13(1), 89-99. https://doi.org/10.1109/JSEN.2012.2225831