InP- and GaAs-based plasmonic high-electron-mobility transistors for room-temperature ultrahigh-sensitive terahertz sensing and imaging

Takayuki Watanabe, Stephane A. Boubanga-Tombet, Yudai Tanimoto, Denis Fateev, Viacheslav Popov, Dominique Coquillat, Wojciech Knap, Yahya M. Meziani, Yuye Wang, Hiroaki Minamide, Hiromasa Ito, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

58 Citations (Scopus)

Abstract

This paper reviews recent advances in the design and performance of our original InP- and GaAs-based plasmonic high-electron-mobility transistors (HEMTs) for ultrahighlysensitive terahertz (THz) sensing and imaging. First, the fundamental theory of plasmonic THz detection is briefly described. Second, single-gate HEMTs with parasitic antennae are introduced as a basic core device structure, and their detection characteristics and sub-THz imaging potentialities are investigated. Third, dual-grating-gate (DGG)-HEMT structures are investigated for broadband highly sensitive detection of THz radiations, and the record sensitivity and the highly-sensitive THz imaging are demonstrated using the InP-based asymmetric DGG-HEMTs. Finally, the obtained results are summarized and future trends are addressed.

Original languageEnglish
Pages (from-to)89-99
Number of pages11
JournalIEEE Sensors Journal
Volume13
Issue number1
DOIs
Publication statusPublished - 2013 Jan

Keywords

  • Asymmetry
  • Detection
  • High-electron-mobility transistor (HEMT)
  • Imaging
  • Plasmon
  • Sensing
  • Terahertz

ASJC Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering

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