Innovative Techniques for Fast Growth and Fabrication of High Purity GaN Single Crystals

Daisuke Tomida, Makoto Saito, Quanxi Bao, Tohru Ishiguro, Shigefusa F. Chichibu

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The ammonothermal method involves an upper and lower temperature difference that is provided in an autoclave by a baffle plate, and GaN, which is dissolved in supercritical ammonia in the raw material dissolution region and deposited on a seed crystal in the crystal growth region. Because dissolution and deposition can be continuously performed in an autoclave, this is a suitable method for producing large crystals. The growth of bulk GaN single crystals by the ammonothermal method is currently under development and there remain many indeterminate factors. This chapter describes the technological developments to achieve a high-speed growth and high quality of grown crystals.

Original languageEnglish
Title of host publicationSpringer Series in Materials Science
PublisherSpringer Science and Business Media Deutschland GmbH
Pages65-76
Number of pages12
DOIs
Publication statusPublished - 2021

Publication series

NameSpringer Series in Materials Science
Volume304
ISSN (Print)0933-033X
ISSN (Electronic)2196-2812

ASJC Scopus subject areas

  • Materials Science(all)

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