Initial stages of the thermal oxidation of Si(001) 2 × 1 surface studied by scanning tunneling microscopy

Masaharu Udagawa, Masaaki Niwa, Isao Sumita

Research output: Contribution to conferencePaper

Abstract

The initial stages of the thermal oxidation of Si(001) 2 × 1 surface were studied by scanning tunneling microscopy (STM). The O2 exposure at 600°C produced a random distribution of Si islands, 'dark sites', 'sequence of dots', and 'dots with dark surroundings'. The 'sequence of dots' and the 'dots with dark surroundings' seem to remain on the surface even after the successive heating. The 'dark sites', the 'sequence of dots', and the 'dots with dark surroundings' are considered to be initial forms of oxides. From the experimental results, a possible model of the 'sequence of dots' was proposed. Also in the discussion, some relations between the SiO2/Si interface and the initial forms of the thermal oxides have been suggested.

Original languageEnglish
Pages108-110
Number of pages3
DOIs
Publication statusPublished - 1992 Jan 1
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Initial stages of the thermal oxidation of Si(001) 2 × 1 surface studied by scanning tunneling microscopy'. Together they form a unique fingerprint.

  • Cite this

    Udagawa, M., Niwa, M., & Sumita, I. (1992). Initial stages of the thermal oxidation of Si(001) 2 × 1 surface studied by scanning tunneling microscopy. 108-110. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, . https://doi.org/10.7567/ssdm.1992.pa1-1