Initial stages of the thermal oxidation of Si(001) 2 × 1 surface studied by scanning tunneling microscopy

Masaharu Udagawa; Masaaki Niwa; Isao Sumita

doi:10.7567/ssdm.1992.pa1-1

Initial stages of the thermal oxidation of Si(001) 2 × 1 surface studied by scanning tunneling microscopy

Masaharu Udagawa, Masaaki Niwa, Isao Sumita

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to conference › Paper

Abstract

The initial stages of the thermal oxidation of Si(001) 2 × 1 surface were studied by scanning tunneling microscopy (STM). The O₂ exposure at 600°C produced a random distribution of Si islands, 'dark sites', 'sequence of dots', and 'dots with dark surroundings'. The 'sequence of dots' and the 'dots with dark surroundings' seem to remain on the surface even after the successive heating. The 'dark sites', the 'sequence of dots', and the 'dots with dark surroundings' are considered to be initial forms of oxides. From the experimental results, a possible model of the 'sequence of dots' was proposed. Also in the discussion, some relations between the SiO₂/Si interface and the initial forms of the thermal oxides have been suggested.

Original language	English
Pages	108-110
Number of pages	3
DOIs	https://doi.org/10.7567/ssdm.1992.pa1-1
Publication status	Published - 1992 Jan 1
Event	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: 1992 Aug 26 → 1992 Aug 28

Other

Other	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
City	Tsukuba, Jpn
Period	92/8/26 → 92/8/28

ASJC Scopus subject areas

Engineering(all)

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10.7567/ssdm.1992.pa1-1

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Udagawa, M., Niwa, M., & Sumita, I. (1992). Initial stages of the thermal oxidation of Si(001) 2 × 1 surface studied by scanning tunneling microscopy. 108-110. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, . https://doi.org/10.7567/ssdm.1992.pa1-1

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abstract = "The initial stages of the thermal oxidation of Si(001) 2 × 1 surface were studied by scanning tunneling microscopy (STM). The O2 exposure at 600°C produced a random distribution of Si islands, 'dark sites', 'sequence of dots', and 'dots with dark surroundings'. The 'sequence of dots' and the 'dots with dark surroundings' seem to remain on the surface even after the successive heating. The 'dark sites', the 'sequence of dots', and the 'dots with dark surroundings' are considered to be initial forms of oxides. From the experimental results, a possible model of the 'sequence of dots' was proposed. Also in the discussion, some relations between the SiO2/Si interface and the initial forms of the thermal oxides have been suggested.",

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year = "1992",

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doi = "10.7567/ssdm.1992.pa1-1",

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AU - Udagawa, Masaharu

AU - Niwa, Masaaki

AU - Sumita, Isao

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N2 - The initial stages of the thermal oxidation of Si(001) 2 × 1 surface were studied by scanning tunneling microscopy (STM). The O2 exposure at 600°C produced a random distribution of Si islands, 'dark sites', 'sequence of dots', and 'dots with dark surroundings'. The 'sequence of dots' and the 'dots with dark surroundings' seem to remain on the surface even after the successive heating. The 'dark sites', the 'sequence of dots', and the 'dots with dark surroundings' are considered to be initial forms of oxides. From the experimental results, a possible model of the 'sequence of dots' was proposed. Also in the discussion, some relations between the SiO2/Si interface and the initial forms of the thermal oxides have been suggested.

AB - The initial stages of the thermal oxidation of Si(001) 2 × 1 surface were studied by scanning tunneling microscopy (STM). The O2 exposure at 600°C produced a random distribution of Si islands, 'dark sites', 'sequence of dots', and 'dots with dark surroundings'. The 'sequence of dots' and the 'dots with dark surroundings' seem to remain on the surface even after the successive heating. The 'dark sites', the 'sequence of dots', and the 'dots with dark surroundings' are considered to be initial forms of oxides. From the experimental results, a possible model of the 'sequence of dots' was proposed. Also in the discussion, some relations between the SiO2/Si interface and the initial forms of the thermal oxides have been suggested.

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