The initial stages of the thermal oxidation of Si(001) 2 × 1 surface were studied by scanning tunneling microscopy (STM). The O2 exposure at 600°C produced a random distribution of Si islands, 'dark sites', 'sequence of dots', and 'dots with dark surroundings'. The 'sequence of dots' and the 'dots with dark surroundings' seem to remain on the surface even after the successive heating. The 'dark sites', the 'sequence of dots', and the 'dots with dark surroundings' are considered to be initial forms of oxides. From the experimental results, a possible model of the 'sequence of dots' was proposed. Also in the discussion, some relations between the SiO2/Si interface and the initial forms of the thermal oxides have been suggested.
|Number of pages||3|
|Publication status||Published - 1992 Jan 1|
|Event||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
Duration: 1992 Aug 26 → 1992 Aug 28
|Other||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||92/8/26 → 92/8/28|
ASJC Scopus subject areas