Initial stages of cubic GaN growth on the GaAs(001) surface studied by scanning tunneling microscopy

Qi Kun Xue, Qi Zhen Xue, Yukio Hasegawa, Ignatius S.T. Tsong, Toshio Sakurai

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21 Citations (Scopus)

Abstract

Nitridation of the GaAs(001) surfaces using an N-atom radio-frequency plasma source is investigated by in situ scanning tunneling microscopy (STM). Atomically flat (3 x 3) nitrided surfaces commensurate and coherent with the substrate have been achieved on the As-rich (2 x 4) and (2 x 6) surfaces. Nitridation proceeds via competing mechanisms of (3 x 3) ordering and step-etching caused by the N-atoms. The former simply involves N-As exchange, which does not require significant morphology modification, whereas the latter causes the roughening of the substrate under the standard GaN growth conditions. On the Ga-rich surface, the GaN islands immediately form at the step-edges, suggesting the possibility of self-assembled nanostructures of GaN.

Original languageEnglish
Pages (from-to)L1486-L1489
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume36
Issue number11 SUPPL. B
DOIs
Publication statusPublished - 1997 Nov 15
Externally publishedYes

Keywords

  • Etching
  • GaAs
  • GaN
  • Molecular beam epitaxy
  • Nitrides
  • RF plasma
  • Scanning tunneling microscopy
  • Surface reconstruction

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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