Initial stage of sputtering in silicon oxide

Takeo Hattori, Yukimoto Hisajima, Hiroyuki Saito, Toshihisa Suzuki, Hiroshi Daimon, Yoshitada Murata, Masaru Tsukada

    Research output: Contribution to journalArticle

    13 Citations (Scopus)

    Abstract

    The effect of argon ion bombardment on a silicon oxide film prepared on a Si(111) surface by dry oxidation was investigated by measuring partial yield spectra in addition to the oxygen induced Si 2p core level shift. The experimental observations can be understood such that the SiO2 network is decomposed at the initial stage of argon ion bombardment. In the following stage of bombardment, the silicon oxide films are sputter etched resulting in a decrease in the oxide film thickness.

    Original languageEnglish
    Pages (from-to)244-246
    Number of pages3
    JournalApplied Physics Letters
    Volume42
    Issue number3
    DOIs
    Publication statusPublished - 1983 Dec 1

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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  • Cite this

    Hattori, T., Hisajima, Y., Saito, H., Suzuki, T., Daimon, H., Murata, Y., & Tsukada, M. (1983). Initial stage of sputtering in silicon oxide. Applied Physics Letters, 42(3), 244-246. https://doi.org/10.1063/1.93902