Initial stage of SiO2/Si interface formation on Si(111) surface

Takeo Hattori, Hiroshi Nohira, Yoshinari Tamura, Hiroki Ogawa

    Research output: Contribution to journalArticle

    17 Citations (Scopus)

    Abstract

    The initial stages of SiO2/Si interface formation on a Si(111) surface were investigated at 300°C in dry oxygen with a pressure of 133 Pa. It was found that the SiO2/Si interfacial transition layer is formed in three steps characterized by three different oxidation rates.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume31
    Issue number5 B
    Publication statusPublished - 1992

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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