Abstract
The initial stages of SiO2/Si interface formation on n-type and p-type Si(111) surfaces treated with 40% NH4F were investigated at 300°C in dry oxygen with a pressure of 133 Pa. It was found that the larger oxidation rate is obtained for p-type Si and the SiO2/Si interface formed on n-type Si(111) is close to atomically flat.
Original language | English |
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Pages | 111-113 |
Number of pages | 3 |
Publication status | Published - 1992 Dec 1 |
Event | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: 1992 Aug 26 → 1992 Aug 28 |
Other
Other | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 |
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City | Tsukuba, Jpn |
Period | 92/8/26 → 92/8/28 |
ASJC Scopus subject areas
- Engineering(all)