Initial stage of SiO2/Si interface formation on Si(111) surface

Yoshinari Tamura; Kazuaki Ohishi; Hiroshi Nohira; Takeo Hattori

Initial stage of SiO2/Si interface formation on Si(111) surface

Yoshinari Tamura, Kazuaki Ohishi, Hiroshi Nohira, Takeo Hattori

Research output: Contribution to conference › Paper › peer-review

Abstract

The initial stages of SiO₂/Si interface formation on n-type and p-type Si(111) surfaces treated with 40% NH₄F were investigated at 300°C in dry oxygen with a pressure of 133 Pa. It was found that the larger oxidation rate is obtained for p-type Si and the SiO₂/Si interface formed on n-type Si(111) is close to atomically flat.

Original language	English
Pages	111-113
Number of pages	3
Publication status	Published - 1992 Dec 1
Event	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: 1992 Aug 26 → 1992 Aug 28

Other

Other	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
City	Tsukuba, Jpn
Period	92/8/26 → 92/8/28

ASJC Scopus subject areas

Engineering(all)

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title = "Initial stage of SiO2/Si interface formation on Si(111) surface",

abstract = "The initial stages of SiO2/Si interface formation on n-type and p-type Si(111) surfaces treated with 40% NH4F were investigated at 300°C in dry oxygen with a pressure of 133 Pa. It was found that the larger oxidation rate is obtained for p-type Si and the SiO2/Si interface formed on n-type Si(111) is close to atomically flat.",

author = "Yoshinari Tamura and Kazuaki Ohishi and Hiroshi Nohira and Takeo Hattori",

year = "1992",

month = dec,

day = "1",

language = "English",

pages = "111--113",

note = "Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 ; Conference date: 26-08-1992 Through 28-08-1992",

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TY - CONF

T1 - Initial stage of SiO2/Si interface formation on Si(111) surface

AU - Tamura, Yoshinari

AU - Ohishi, Kazuaki

AU - Nohira, Hiroshi

AU - Hattori, Takeo

PY - 1992/12/1

Y1 - 1992/12/1

N2 - The initial stages of SiO2/Si interface formation on n-type and p-type Si(111) surfaces treated with 40% NH4F were investigated at 300°C in dry oxygen with a pressure of 133 Pa. It was found that the larger oxidation rate is obtained for p-type Si and the SiO2/Si interface formed on n-type Si(111) is close to atomically flat.

AB - The initial stages of SiO2/Si interface formation on n-type and p-type Si(111) surfaces treated with 40% NH4F were investigated at 300°C in dry oxygen with a pressure of 133 Pa. It was found that the larger oxidation rate is obtained for p-type Si and the SiO2/Si interface formed on n-type Si(111) is close to atomically flat.

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M3 - Paper

AN - SCOPUS:0026976034

SP - 111

EP - 113

T2 - Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92

Y2 - 26 August 1992 through 28 August 1992

ER -