The initial stages of SiO2/Si interface formation on n-type and p-type Si(111) surfaces treated with 40% NH4F were investigated at 300°C in dry oxygen with a pressure of 133 Pa. It was found that the larger oxidation rate is obtained for p-type Si and the SiO2/Si interface formed on n-type Si(111) is close to atomically flat.
|Number of pages||3|
|Publication status||Published - 1992 Dec 1|
|Event||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
Duration: 1992 Aug 26 → 1992 Aug 28
|Other||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||92/8/26 → 92/8/28|
ASJC Scopus subject areas