Initial stage of SiO2/Si interface formation on Si(111) surface

Yoshinari Tamura, Kazuaki Ohishi, Hiroshi Nohira, Takeo Hattori

    Research output: Contribution to conferencePaperpeer-review

    2 Citations (Scopus)

    Abstract

    The initial stages of SiO2/Si interface formation on n-type and p-type Si(111) surfaces treated with 40% NH4F were investigated at 300°C in dry oxygen with a pressure of 133 Pa. It was found that the larger oxidation rate is obtained for p-type Si and the SiO2/Si interface formed on n-type Si(111) is close to atomically flat.

    Original languageEnglish
    Pages111-113
    Number of pages3
    Publication statusPublished - 1992 Dec 1
    EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
    Duration: 1992 Aug 261992 Aug 28

    Other

    OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
    CityTsukuba, Jpn
    Period92/8/2692/8/28

    ASJC Scopus subject areas

    • Engineering(all)

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