@inproceedings{0050dace622c48ffb25c950cefa0f784,
title = "Initial stage of SiO2/Si interface formation on hydrogen-terminated silicon surfaces",
abstract = "The initial stages of SiO2/Si interface formation on hydrogen-terminated n-type and p-type Si(111) surfaces, which are obtained by the treatment in 40% NH4F solution, were investigated in details at 300 °C in dry oxygen with a pressure of 1 Torr up to nearly two molecular layers of silicon oxide. It was found that the oxidation proceeds more uniformly on p-type Si than on n-type Si. However, even on p-type Si the oxidation does not proceed uniformly.",
author = "T. Hattori and H. Nohira and K. Ohishi and Y. Shimizu and Y. Tamura",
year = "1993",
month = dec,
day = "1",
language = "English",
isbn = "1558992138",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "387--392",
editor = "Higashi, {Gregg S.} and Irene, {Eugene A.} and Tadahiro Ohmi",
booktitle = "Surface Chemical Cleaning and Passivation for Semiconductor Processing",
note = "Proceedings of the 1993 Spring Meeting of the Materials Research Society ; Conference date: 13-04-1993 Through 15-04-1993",
}