Initial stage of SiO2/Si interface formation on hydrogen-terminated silicon surfaces

T. Hattori; H. Nohira; K. Ohishi; Y. Shimizu; Y. Tamura

Initial stage of SiO₂/Si interface formation on hydrogen-terminated silicon surfaces

T. Hattori, H. Nohira, K. Ohishi, Y. Shimizu, Y. Tamura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The initial stages of SiO₂/Si interface formation on hydrogen-terminated n-type and p-type Si(111) surfaces, which are obtained by the treatment in 40% NH₄F solution, were investigated in details at 300 °C in dry oxygen with a pressure of 1 Torr up to nearly two molecular layers of silicon oxide. It was found that the oxidation proceeds more uniformly on p-type Si than on n-type Si. However, even on p-type Si the oxidation does not proceed uniformly.

Original language	English
Title of host publication	Surface Chemical Cleaning and Passivation for Semiconductor Processing
Editors	Gregg S. Higashi, Eugene A. Irene, Tadahiro Ohmi
Publisher	Publ by Materials Research Society
Pages	387-392
Number of pages	6
ISBN (Print)	1558992138
Publication status	Published - 1993 Dec 1
Event	Proceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: 1993 Apr 13 → 1993 Apr 15

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	315
ISSN (Print)	0272-9172

Other

Other	Proceedings of the 1993 Spring Meeting of the Materials Research Society
City	San Francisco, CA, USA
Period	93/4/13 → 93/4/15

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Fingerprint Dive into the research topics of 'Initial stage of SiO<sub>2</sub>/Si interface formation on hydrogen-terminated silicon surfaces'. Together they form a unique fingerprint.

Cite this

Hattori, T., Nohira, H., Ohishi, K., Shimizu, Y., & Tamura, Y. (1993). Initial stage of SiO₂/Si interface formation on hydrogen-terminated silicon surfaces. In G. S. Higashi, E. A. Irene, & T. Ohmi (Eds.), Surface Chemical Cleaning and Passivation for Semiconductor Processing (pp. 387-392). (Materials Research Society Symposium Proceedings; Vol. 315). Publ by Materials Research Society.

Initial stage of SiO₂/Si interface formation on hydrogen-terminated silicon surfaces. / Hattori, T.; Nohira, H.; Ohishi, K.; Shimizu, Y.; Tamura, Y.

Surface Chemical Cleaning and Passivation for Semiconductor Processing. ed. / Gregg S. Higashi; Eugene A. Irene; Tadahiro Ohmi. Publ by Materials Research Society, 1993. p. 387-392 (Materials Research Society Symposium Proceedings; Vol. 315).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hattori, T, Nohira, H, Ohishi, K, Shimizu, Y & Tamura, Y 1993, Initial stage of SiO₂/Si interface formation on hydrogen-terminated silicon surfaces. in GS Higashi, EA Irene & T Ohmi (eds), Surface Chemical Cleaning and Passivation for Semiconductor Processing. Materials Research Society Symposium Proceedings, vol. 315, Publ by Materials Research Society, pp. 387-392, Proceedings of the 1993 Spring Meeting of the Materials Research Society, San Francisco, CA, USA, 93/4/13.

Hattori, T. ; Nohira, H. ; Ohishi, K. ; Shimizu, Y. ; Tamura, Y. / Initial stage of SiO₂/Si interface formation on hydrogen-terminated silicon surfaces. Surface Chemical Cleaning and Passivation for Semiconductor Processing. editor / Gregg S. Higashi ; Eugene A. Irene ; Tadahiro Ohmi. Publ by Materials Research Society, 1993. pp. 387-392 (Materials Research Society Symposium Proceedings).

@inproceedings{0050dace622c48ffb25c950cefa0f784,

title = "Initial stage of SiO2/Si interface formation on hydrogen-terminated silicon surfaces",

abstract = "The initial stages of SiO2/Si interface formation on hydrogen-terminated n-type and p-type Si(111) surfaces, which are obtained by the treatment in 40% NH4F solution, were investigated in details at 300 °C in dry oxygen with a pressure of 1 Torr up to nearly two molecular layers of silicon oxide. It was found that the oxidation proceeds more uniformly on p-type Si than on n-type Si. However, even on p-type Si the oxidation does not proceed uniformly.",

author = "T. Hattori and H. Nohira and K. Ohishi and Y. Shimizu and Y. Tamura",

year = "1993",

month = dec,

day = "1",

language = "English",

isbn = "1558992138",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "387--392",

editor = "Higashi, {Gregg S.} and Irene, {Eugene A.} and Tadahiro Ohmi",

booktitle = "Surface Chemical Cleaning and Passivation for Semiconductor Processing",

note = "Proceedings of the 1993 Spring Meeting of the Materials Research Society ; Conference date: 13-04-1993 Through 15-04-1993",

}

TY - GEN

T1 - Initial stage of SiO2/Si interface formation on hydrogen-terminated silicon surfaces

AU - Hattori, T.

AU - Nohira, H.

AU - Ohishi, K.

AU - Shimizu, Y.

AU - Tamura, Y.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - The initial stages of SiO2/Si interface formation on hydrogen-terminated n-type and p-type Si(111) surfaces, which are obtained by the treatment in 40% NH4F solution, were investigated in details at 300 °C in dry oxygen with a pressure of 1 Torr up to nearly two molecular layers of silicon oxide. It was found that the oxidation proceeds more uniformly on p-type Si than on n-type Si. However, even on p-type Si the oxidation does not proceed uniformly.

AB - The initial stages of SiO2/Si interface formation on hydrogen-terminated n-type and p-type Si(111) surfaces, which are obtained by the treatment in 40% NH4F solution, were investigated in details at 300 °C in dry oxygen with a pressure of 1 Torr up to nearly two molecular layers of silicon oxide. It was found that the oxidation proceeds more uniformly on p-type Si than on n-type Si. However, even on p-type Si the oxidation does not proceed uniformly.

UR - http://www.scopus.com/inward/record.url?scp=0027872812&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027872812&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027872812

SN - 1558992138

T3 - Materials Research Society Symposium Proceedings

SP - 387

EP - 392

BT - Surface Chemical Cleaning and Passivation for Semiconductor Processing

A2 - Higashi, Gregg S.

A2 - Irene, Eugene A.

A2 - Ohmi, Tadahiro

PB - Publ by Materials Research Society

T2 - Proceedings of the 1993 Spring Meeting of the Materials Research Society

Y2 - 13 April 1993 through 15 April 1993

ER -