Initial stage of SiO2/Si interface formation on hydrogen-terminated silicon surfaces

T. Hattori, H. Nohira, K. Ohishi, Y. Shimizu, Y. Tamura

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    5 Citations (Scopus)

    Abstract

    The initial stages of SiO2/Si interface formation on hydrogen-terminated n-type and p-type Si(111) surfaces, which are obtained by the treatment in 40% NH4F solution, were investigated in details at 300 °C in dry oxygen with a pressure of 1 Torr up to nearly two molecular layers of silicon oxide. It was found that the oxidation proceeds more uniformly on p-type Si than on n-type Si. However, even on p-type Si the oxidation does not proceed uniformly.

    Original languageEnglish
    Title of host publicationSurface Chemical Cleaning and Passivation for Semiconductor Processing
    EditorsGregg S. Higashi, Eugene A. Irene, Tadahiro Ohmi
    PublisherPubl by Materials Research Society
    Pages387-392
    Number of pages6
    ISBN (Print)1558992138
    Publication statusPublished - 1993 Dec 1
    EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
    Duration: 1993 Apr 131993 Apr 15

    Publication series

    NameMaterials Research Society Symposium Proceedings
    Volume315
    ISSN (Print)0272-9172

    Other

    OtherProceedings of the 1993 Spring Meeting of the Materials Research Society
    CitySan Francisco, CA, USA
    Period93/4/1393/4/15

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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