Initial stage of SiO 2 valence band formation

K. Hirose, H. Nohira, T. Koike, T. Aizaki, T. Hattori

    Research output: Contribution to journalArticlepeer-review

    10 Citations (Scopus)

    Abstract

    Detailed changes in valence band spectra of ultra-thin SiO 2 at initial stages of oxidation are revealed by high resolution X-ray photoelectron spectroseopy. Comparisons of the experimental data with molecular orbital calculations deduce the transition structure near the SiO 2 /Si interfaces.

    Original languageEnglish
    Pages (from-to)542-545
    Number of pages4
    JournalApplied Surface Science
    Volume123-124
    DOIs
    Publication statusPublished - 1998 Jan

    Keywords

    • DV-Xα method
    • Molecular orbital calculation
    • SiO
    • SiO /Si interface
    • Transition layer
    • XPS

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

    Fingerprint Dive into the research topics of 'Initial stage of SiO <sub>2</sub> valence band formation'. Together they form a unique fingerprint.

    Cite this