Initial stage of SiC growth on Si(1 0 0) surface

T. Takaoka, H. Saito, Y. Igari, I. Kusunoki

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The growth of SiC film by exposing Si(1 0 0) surface to C2H4 gas at sample temperature of 700°C was examined using reflection high-energy electron diffraction (RHEED), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). From the dependence of the RHEED patterns on C2H4 exposure, a continuous shift of the lattice constant of SiC film during the growth was indicated. The width of the SiC(10) spot was very broad, which suggests that there is a dispersion of length between atoms in SiC islands. The surface morphology at the initial stage of film growth was also observed by SEM.

Original languageEnglish
Pages (from-to)175-182
Number of pages8
JournalJournal of Crystal Growth
Volume183
Issue number1-2
DOIs
Publication statusPublished - 1998 Jan

Keywords

  • Island growth
  • Reflection high-energy electron diffraction (RHEED)
  • Scanning electron microscopy (SEM)
  • Silicon
  • Silicon carbide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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