Initial stage of SiC film growth on Si(111)7×7 and Si(100)2×1 surfaces using C60 as a precursor studied by STM and HRTEM

S. Suto, C. W. Hu, F. Sato, M. Tanaka, Y. Kasukabe, A. Kasuya

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

We have investigated the structure and the growth mechanism of cubic silicon carbide (3C-SiC) films formed by thermal reaction of Si(111) and Si(100) substrates with C60 molecules, using scanning tunneling microscopy (STM) and high-resolution transmission electron microscopy (HRTEM). The cross-sectional HRTEM images show the good epitaxial growth of SiC films on the Si(111) surface and the 3×3 surface reconstruction is observed by STM. In contrast, many dislocations are formed in the SiC films grown on the Si(100) surface and no surface structure is observed by STM. We find that the amorphous buffer layers, which have relevance to release the strain due to the lattice mismatching, are formed at the interface between SiC films and the Si(111) substrate.

Original languageEnglish
Pages (from-to)265-268
Number of pages4
JournalThin Solid Films
Volume369
Issue number1
DOIs
Publication statusPublished - 2000 Jul 3
EventThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
Duration: 1999 Sep 121999 Sep 17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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