TY - JOUR
T1 - Initial stage of SiC film growth on Si(111)7×7 and Si(100)2×1 surfaces using C60 as a precursor studied by STM and HRTEM
AU - Suto, Shozo
AU - Hu, C. W.
AU - Sato, F.
AU - Tanaka, M.
AU - Kasukabe, Y.
AU - Kasuya, A.
N1 - Funding Information:
The authors would like to thank Professor W. Uchida, Dr K. Sakamoto and Mr K. Ohno for useful discussions on HREELS and PES measurements. This work was supported in part by Izumi Science and Technology Foundation.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2000/7/3
Y1 - 2000/7/3
N2 - We have investigated the structure and the growth mechanism of cubic silicon carbide (3C-SiC) films formed by thermal reaction of Si(111) and Si(100) substrates with C60 molecules, using scanning tunneling microscopy (STM) and high-resolution transmission electron microscopy (HRTEM). The cross-sectional HRTEM images show the good epitaxial growth of SiC films on the Si(111) surface and the 3×3 surface reconstruction is observed by STM. In contrast, many dislocations are formed in the SiC films grown on the Si(100) surface and no surface structure is observed by STM. We find that the amorphous buffer layers, which have relevance to release the strain due to the lattice mismatching, are formed at the interface between SiC films and the Si(111) substrate.
AB - We have investigated the structure and the growth mechanism of cubic silicon carbide (3C-SiC) films formed by thermal reaction of Si(111) and Si(100) substrates with C60 molecules, using scanning tunneling microscopy (STM) and high-resolution transmission electron microscopy (HRTEM). The cross-sectional HRTEM images show the good epitaxial growth of SiC films on the Si(111) surface and the 3×3 surface reconstruction is observed by STM. In contrast, many dislocations are formed in the SiC films grown on the Si(100) surface and no surface structure is observed by STM. We find that the amorphous buffer layers, which have relevance to release the strain due to the lattice mismatching, are formed at the interface between SiC films and the Si(111) substrate.
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U2 - 10.1016/S0040-6090(00)00820-8
DO - 10.1016/S0040-6090(00)00820-8
M3 - Conference article
AN - SCOPUS:0034225332
VL - 369
SP - 265
EP - 268
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1
T2 - The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI)
Y2 - 12 September 1999 through 17 September 1999
ER -