Abstract
We have investigated the structure and the growth mechanism of cubic silicon carbide (3C-SiC) films formed by thermal reaction of Si(111) and Si(100) substrates with C60 molecules, using scanning tunneling microscopy (STM) and high-resolution transmission electron microscopy (HRTEM). The cross-sectional HRTEM images show the good epitaxial growth of SiC films on the Si(111) surface and the 3×3 surface reconstruction is observed by STM. In contrast, many dislocations are formed in the SiC films grown on the Si(100) surface and no surface structure is observed by STM. We find that the amorphous buffer layers, which have relevance to release the strain due to the lattice mismatching, are formed at the interface between SiC films and the Si(111) substrate.
Original language | English |
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Pages (from-to) | 265-268 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 369 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2000 Jul 3 |
Event | The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn Duration: 1999 Sep 12 → 1999 Sep 17 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry