Initial stage of SiC film growth on Si(111)7×7 and Si(100)2×1 surfaces using C60 as a precursor studied by STM and HRTEM

S. Suto; C. W. Hu; F. Sato; M. Tanaka; Y. Kasukabe; A. Kasuya

doi:10.1016/S0040-6090(00)00820-8

Initial stage of SiC film growth on Si(111)7×7 and Si(100)2×1 surfaces using C₆₀ as a precursor studied by STM and HRTEM

S. Suto, C. W. Hu, F. Sato, M. Tanaka, Y. Kasukabe, A. Kasuya

Research output: Contribution to journal › Conference article

5 Citations (Scopus)

Abstract

We have investigated the structure and the growth mechanism of cubic silicon carbide (3C-SiC) films formed by thermal reaction of Si(111) and Si(100) substrates with C₆₀ molecules, using scanning tunneling microscopy (STM) and high-resolution transmission electron microscopy (HRTEM). The cross-sectional HRTEM images show the good epitaxial growth of SiC films on the Si(111) surface and the 3×3 surface reconstruction is observed by STM. In contrast, many dislocations are formed in the SiC films grown on the Si(100) surface and no surface structure is observed by STM. We find that the amorphous buffer layers, which have relevance to release the strain due to the lattice mismatching, are formed at the interface between SiC films and the Si(111) substrate.

Original language	English
Pages (from-to)	265-268
Number of pages	4
Journal	Thin Solid Films
Volume	369
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(00)00820-8
Publication status	Published - 2000 Jul 3
Event	The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn Duration: 1999 Sep 12 → 1999 Sep 17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(00)00820-8

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Suto, S., Hu, C. W., Sato, F., Tanaka, M., Kasukabe, Y., & Kasuya, A. (2000). Initial stage of SiC film growth on Si(111)7×7 and Si(100)2×1 surfaces using C₆₀ as a precursor studied by STM and HRTEM. Thin Solid Films, 369(1), 265-268. https://doi.org/10.1016/S0040-6090(00)00820-8

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title = "Initial stage of SiC film growth on Si(111)7×7 and Si(100)2×1 surfaces using C60 as a precursor studied by STM and HRTEM",

abstract = "We have investigated the structure and the growth mechanism of cubic silicon carbide (3C-SiC) films formed by thermal reaction of Si(111) and Si(100) substrates with C60 molecules, using scanning tunneling microscopy (STM) and high-resolution transmission electron microscopy (HRTEM). The cross-sectional HRTEM images show the good epitaxial growth of SiC films on the Si(111) surface and the 3×3 surface reconstruction is observed by STM. In contrast, many dislocations are formed in the SiC films grown on the Si(100) surface and no surface structure is observed by STM. We find that the amorphous buffer layers, which have relevance to release the strain due to the lattice mismatching, are formed at the interface between SiC films and the Si(111) substrate.",

author = "S. Suto and Hu, {C. W.} and F. Sato and M. Tanaka and Y. Kasukabe and A. Kasuya",

year = "2000",

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T1 - Initial stage of SiC film growth on Si(111)7×7 and Si(100)2×1 surfaces using C60 as a precursor studied by STM and HRTEM

AU - Suto, S.

AU - Hu, C. W.

AU - Sato, F.

AU - Tanaka, M.

AU - Kasukabe, Y.

AU - Kasuya, A.

PY - 2000/7/3

Y1 - 2000/7/3

N2 - We have investigated the structure and the growth mechanism of cubic silicon carbide (3C-SiC) films formed by thermal reaction of Si(111) and Si(100) substrates with C60 molecules, using scanning tunneling microscopy (STM) and high-resolution transmission electron microscopy (HRTEM). The cross-sectional HRTEM images show the good epitaxial growth of SiC films on the Si(111) surface and the 3×3 surface reconstruction is observed by STM. In contrast, many dislocations are formed in the SiC films grown on the Si(100) surface and no surface structure is observed by STM. We find that the amorphous buffer layers, which have relevance to release the strain due to the lattice mismatching, are formed at the interface between SiC films and the Si(111) substrate.

AB - We have investigated the structure and the growth mechanism of cubic silicon carbide (3C-SiC) films formed by thermal reaction of Si(111) and Si(100) substrates with C60 molecules, using scanning tunneling microscopy (STM) and high-resolution transmission electron microscopy (HRTEM). The cross-sectional HRTEM images show the good epitaxial growth of SiC films on the Si(111) surface and the 3×3 surface reconstruction is observed by STM. In contrast, many dislocations are formed in the SiC films grown on the Si(100) surface and no surface structure is observed by STM. We find that the amorphous buffer layers, which have relevance to release the strain due to the lattice mismatching, are formed at the interface between SiC films and the Si(111) substrate.

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EP - 268

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

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T2 - The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI)

Y2 - 12 September 1999 through 17 September 1999

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