TY - JOUR
T1 - Initial stage of oxidation of hydrogen-terminated silicon surfaces
AU - Hattori, Takeo
AU - Aiba, Takeshi
AU - Iijima, Etsuo
AU - Okube, Yohichi
AU - Nohira, Hiroshi
AU - Tate, Naoto
AU - Katayama, Masatake
PY - 1996/1/1
Y1 - 1996/1/1
N2 - Structural changes produced by the oxidation of hydrogen-terminated Si(111)-1 × 1 and Si(100)-2 × 1 surfaces at 300°C in dry oxygen under a pressure of 1 Torr were investigated by X-ray photoelectron spectroscopy (XPS) and multiple internal reflection infrared absorption spectroscopy (MIR-IRAS). Following results are obtained from the analysis and simulation of the experimental results: (1) the layer-by-layer oxidation reaction occurs locally at SiO 2 /Si(111) interface, while that does not occur at SiO 2 /Si(100) interface, however, (2) the oxidation on Si(100) surface proceeds more uniformly in atomic scale than that on Si(111) surface.
AB - Structural changes produced by the oxidation of hydrogen-terminated Si(111)-1 × 1 and Si(100)-2 × 1 surfaces at 300°C in dry oxygen under a pressure of 1 Torr were investigated by X-ray photoelectron spectroscopy (XPS) and multiple internal reflection infrared absorption spectroscopy (MIR-IRAS). Following results are obtained from the analysis and simulation of the experimental results: (1) the layer-by-layer oxidation reaction occurs locally at SiO 2 /Si(111) interface, while that does not occur at SiO 2 /Si(100) interface, however, (2) the oxidation on Si(100) surface proceeds more uniformly in atomic scale than that on Si(111) surface.
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U2 - 10.1016/S0169-4332(96)00165-1
DO - 10.1016/S0169-4332(96)00165-1
M3 - Article
AN - SCOPUS:0030235373
VL - 104-105
SP - 323
EP - 328
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -