Initial stage of oxidation of hydrogen-terminated silicon surfaces

Takeo Hattori, Takeshi Aiba, Etsuo Iijima, Yohichi Okube, Hiroshi Nohira, Naoto Tate, Masatake Katayama

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    49 Citations (Scopus)

    Abstract

    Structural changes produced by the oxidation of hydrogen-terminated Si(111)-1 × 1 and Si(100)-2 × 1 surfaces at 300°C in dry oxygen under a pressure of 1 Torr were investigated by X-ray photoelectron spectroscopy (XPS) and multiple internal reflection infrared absorption spectroscopy (MIR-IRAS). Following results are obtained from the analysis and simulation of the experimental results: (1) the layer-by-layer oxidation reaction occurs locally at SiO 2 /Si(111) interface, while that does not occur at SiO 2 /Si(100) interface, however, (2) the oxidation on Si(100) surface proceeds more uniformly in atomic scale than that on Si(111) surface.

    Original languageEnglish
    Pages (from-to)323-328
    Number of pages6
    JournalApplied Surface Science
    Volume104-105
    DOIs
    Publication statusPublished - 1996 Jan 1

    ASJC Scopus subject areas

    • Surfaces, Coatings and Films

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