Initial stage of oxidation of hydrogen-terminated Si(100)-2 × 1 surface

Takeshi Aiba; Ken Yamauchi; Yuichi Shimizu; Naoto Tate; Masatake Katayama; Takeo Hattori

Initial stage of oxidation of hydrogen-terminated Si(100)-2 × 1 surface

Takeshi Aiba, Ken Yamauchi, Yuichi Shimizu, Naoto Tate, Masatake Katayama, Takeo Hattori

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

The initial stage of SiO₂/Si interface formation on an atomically flat hydrogen-terminated Si(100)-2 × 1 surface was studied by X-ray photoelectron spectroscopy. The following results were obtained: 1) the initial stage of interface formation does not depend on the initial surface morphology, 2) the interface layer becomes continuous at the oxide film thickness of 0.5 nm, and 3) at thicknesses greater than this the deviation from an atomically flat interface increases with the progress of oxidation, however, an abrupt compositional transition occurs.

Original language	English
Title of host publication	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
Editors	Seigo Tarucha, Yasuhiko Arakawa, Masao Fukuma, Kazuhito Furuya, Yoshiji Horikoshi, al et al
Place of Publication	Minato-ku, Japan
Publisher	JJAP
Pages	707-711
Number of pages	5
Volume	34
Edition	2 B
Publication status	Published - 1995 Feb
Event	Proceedings of the 1994 International Conference on Solid State Devices and Materials (SSDM'94) - Yokohama, Jpn Duration: 1994 Aug 23 → 1994 Aug 26

Other

Other	Proceedings of the 1994 International Conference on Solid State Devices and Materials (SSDM'94)
City	Yokohama, Jpn
Period	94/8/23 → 94/8/26

ASJC Scopus subject areas

Engineering(all)

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Initial stage of oxidation of hydrogen-terminated Si(100)-2 × 1 surface. / Aiba, Takeshi; Yamauchi, Ken; Shimizu, Yuichi; Tate, Naoto; Katayama, Masatake; Hattori, Takeo.

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. ed. / Seigo Tarucha; Yasuhiko Arakawa; Masao Fukuma; Kazuhito Furuya; Yoshiji Horikoshi; al et al. Vol. 34 2 B. ed. Minato-ku, Japan : JJAP, 1995. p. 707-711.

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Aiba, T, Yamauchi, K, Shimizu, Y, Tate, N, Katayama, M & Hattori, T 1995, Initial stage of oxidation of hydrogen-terminated Si(100)-2 × 1 surface. in S Tarucha, Y Arakawa, M Fukuma, K Furuya, Y Horikoshi & A et al (eds), Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 2 B edn, vol. 34, JJAP, Minato-ku, Japan, pp. 707-711, Proceedings of the 1994 International Conference on Solid State Devices and Materials (SSDM'94), Yokohama, Jpn, 94/8/23.

Aiba, Takeshi ; Yamauchi, Ken ; Shimizu, Yuichi ; Tate, Naoto ; Katayama, Masatake ; Hattori, Takeo. / Initial stage of oxidation of hydrogen-terminated Si(100)-2 × 1 surface. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. editor / Seigo Tarucha ; Yasuhiko Arakawa ; Masao Fukuma ; Kazuhito Furuya ; Yoshiji Horikoshi ; al et al. Vol. 34 2 B. ed. Minato-ku, Japan : JJAP, 1995. pp. 707-711

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abstract = "The initial stage of SiO2/Si interface formation on an atomically flat hydrogen-terminated Si(100)-2 × 1 surface was studied by X-ray photoelectron spectroscopy. The following results were obtained: 1) the initial stage of interface formation does not depend on the initial surface morphology, 2) the interface layer becomes continuous at the oxide film thickness of 0.5 nm, and 3) at thicknesses greater than this the deviation from an atomically flat interface increases with the progress of oxidation, however, an abrupt compositional transition occurs.",

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AU - Aiba, Takeshi

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AU - Hattori, Takeo

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Initial stage of oxidation of hydrogen-terminated Si(100)-2 × 1 surface

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