Initial stage of oxidation of hydrogen-terminated Si(100)-2 × 1 surface

Takeshi Aiba, Ken Yamauchi, Yuichi Shimizu, Naoto Tate, Masatake Katayama, Takeo Hattori

    Research output: Chapter in Book/Report/Conference proceedingChapter

    39 Citations (Scopus)

    Abstract

    The initial stage of SiO2/Si interface formation on an atomically flat hydrogen-terminated Si(100)-2 × 1 surface was studied by X-ray photoelectron spectroscopy. The following results were obtained: 1) the initial stage of interface formation does not depend on the initial surface morphology, 2) the interface layer becomes continuous at the oxide film thickness of 0.5 nm, and 3) at thicknesses greater than this the deviation from an atomically flat interface increases with the progress of oxidation, however, an abrupt compositional transition occurs.

    Original languageEnglish
    Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
    EditorsSeigo Tarucha, Yasuhiko Arakawa, Masao Fukuma, Kazuhito Furuya, Yoshiji Horikoshi, al et al
    Place of PublicationMinato-ku, Japan
    PublisherJJAP
    Pages707-711
    Number of pages5
    Volume34
    Edition2 B
    Publication statusPublished - 1995 Feb
    EventProceedings of the 1994 International Conference on Solid State Devices and Materials (SSDM'94) - Yokohama, Jpn
    Duration: 1994 Aug 231994 Aug 26

    Other

    OtherProceedings of the 1994 International Conference on Solid State Devices and Materials (SSDM'94)
    CityYokohama, Jpn
    Period94/8/2394/8/26

    ASJC Scopus subject areas

    • Engineering(all)

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