Abstract
The initial stage of SiO2/Si interface formation on an atomically flat hydrogen-terminated Si(100)-2 × 1 surface was studied by X-ray photoelectron spectroscopy. The following results were obtained: 1) the initial stage of interface formation does not depend on the initial surface morphology, 2) the interface layer becomes continuous at the oxide film thickness of 0.5 nm, and 3) at thicknesses greater than this the deviation from an atomically flat interface increases with the progress of oxidation, however, an abrupt compositional transition occurs.
Original language | English |
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Title of host publication | Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers |
Editors | Seigo Tarucha, Yasuhiko Arakawa, Masao Fukuma, Kazuhito Furuya, Yoshiji Horikoshi, al et al |
Place of Publication | Minato-ku, Japan |
Publisher | JJAP |
Pages | 707-711 |
Number of pages | 5 |
Volume | 34 |
Edition | 2 B |
Publication status | Published - 1995 Feb |
Event | Proceedings of the 1994 International Conference on Solid State Devices and Materials (SSDM'94) - Yokohama, Jpn Duration: 1994 Aug 23 → 1994 Aug 26 |
Other
Other | Proceedings of the 1994 International Conference on Solid State Devices and Materials (SSDM'94) |
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City | Yokohama, Jpn |
Period | 94/8/23 → 94/8/26 |
ASJC Scopus subject areas
- Engineering(all)