Initial stage growth of In and A1 on a single-domain Si(001)2 × 1 surface

H. W. Yeom, T. Abukawa, M. Nakamura, S. Suzuki, S. Sato, K. Sakamoto, T. Sakamoto, S. Kono

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48 Citations (Scopus)

Abstract

Initial stage growth of In and A1 on a wide-terrace single-domain Si(001)2 × 1 surface has been studied by low-energy electron diffraction (LEED) and X-ray photoelectron spectroscopy. Several submonolayer phases that were not reported on double-domain Si(001)2 × 1 substrates are observed, in addition to those already reported. The resulting sequences of two-dimensional (2D) phases for In and A1 coverages of ≤ 0.5 ML can be interpreted based on an order-disorder transition of arrays of 1D metal-dimer chains. The results show close resemblance to the initial growth of Ga on Si(001) and thus indicate that there is a general mode of growth for the Group-III metals on a Si(001)2 × 1 surface below 0.5 ML. Growth for coverages greater than 0.5 ML and the onset of 3D growth are also discussed.

Original languageEnglish
Pages (from-to)328-334
Number of pages7
JournalSurface Science
Volume341
Issue number3
DOIs
Publication statusPublished - 1995 Nov 10

Keywords

  • Adatoms
  • Aluminum
  • Growth
  • Indium
  • Low energy electron diffraction (LEED)
  • Low index single crystal surfaces
  • Metal-semiconductor interfaces
  • Silicon
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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    Yeom, H. W., Abukawa, T., Nakamura, M., Suzuki, S., Sato, S., Sakamoto, K., Sakamoto, T., & Kono, S. (1995). Initial stage growth of In and A1 on a single-domain Si(001)2 × 1 surface. Surface Science, 341(3), 328-334. https://doi.org/10.1016/0039-6028(95)00688-5