Initial oxidation processes of the Si(110) surface and the chemical bonding states of silicon atoms in the initial oxides have been investigated by using real-time synchrotron-radiation photoemission spectroscopy. Time evolutions of the Sin+ (n=1-4) components in the Si 2p spectrum indicates that the Si3+ component always overwhelms the Si4+ component during the oxidation up to one monolayer. This is in sharp contrast to the Si(001) surface where Si4+ > Si3+ always holds. The dominance of the Si3+ component is related to presence of two types of bonds on the Si(110) surface and to their possible different reactivity against insertion of oxygen atoms.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2009 Feb 17|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering