Initial oxidation of Si(110) as studied by real-time synchrotron-radiation x-ray photomission spectroscopy

M. Suemitsu, Y. Yamamoto, H. Togashi, Y. Enta, A. Yoshigoe, Y. Teraoka

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Initial oxidation processes of the Si(110) surface and the chemical bonding states of silicon atoms in the initial oxides have been investigated by using real-time synchrotron-radiation photoemission spectroscopy. Time evolutions of the Sin+ (n=1-4) components in the Si 2p spectrum indicates that the Si3+ component always overwhelms the Si4+ component during the oxidation up to one monolayer. This is in sharp contrast to the Si(001) surface where Si4+ > Si3+ always holds. The dominance of the Si3+ component is related to presence of two types of bonds on the Si(110) surface and to their possible different reactivity against insertion of oxygen atoms.

Original languageEnglish
Pages (from-to)547-550
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number1
DOIs
Publication statusPublished - 2009 Feb 17

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Initial oxidation of Si(110) as studied by real-time synchrotron-radiation x-ray photomission spectroscopy'. Together they form a unique fingerprint.

Cite this