Abstract
Time evolutions of O 2p intensity from real-time ultraviolet photoelectron spectroscopy were obtained for the initial oxidation of Si(100)- (2×1) surfaces at oxygen pressures P=7.5×10-8–2.8×10-6 Torr and temperatures T=RT-720°C. Despite the separation of the growth mode into the Langmuir-Hinshelwood mode in the low- T–high- P region and the 2D-island growth in the high- T–low- P region, they were unifiedly described by a single rate equation for the oxide coverage ?, which assumes two types of surface oxygen monomers and the number density of oxide islands that scales with θ(1-θ)2.
Original language | English |
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Pages (from-to) | 2334-2337 |
Number of pages | 4 |
Journal | Physical review letters |
Volume | 82 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1999 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)