Initial oxidation of Si(100)- (2×1) as an autocatalytic reaction

Maki Suemitsu, Yoshiharu Enta, Yasushi Miyanishi, Nobuo Miyamoto

Research output: Contribution to journalArticlepeer-review

63 Citations (Scopus)

Abstract

Time evolutions of O 2p intensity from real-time ultraviolet photoelectron spectroscopy were obtained for the initial oxidation of Si(100)- (2×1) surfaces at oxygen pressures P=7.5×10-8–2.8×10-6 Torr and temperatures T=RT-720°C. Despite the separation of the growth mode into the Langmuir-Hinshelwood mode in the low- T–high- P region and the 2D-island growth in the high- T–low- P region, they were unifiedly described by a single rate equation for the oxide coverage ?, which assumes two types of surface oxygen monomers and the number density of oxide islands that scales with θ(1-θ)2.

Original languageEnglish
Pages (from-to)2334-2337
Number of pages4
JournalPhysical Review Letters
Volume82
Issue number11
DOIs
Publication statusPublished - 1999 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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