Initial oxidation of Si(100)- (2×1) as an autocatalytic reaction

Maki Suemitsu; Yoshiharu Enta; Yasushi Miyanishi; Nobuo Miyamoto

doi:10.1103/PhysRevLett.82.2334

Initial oxidation of Si(100)- (2×1) as an autocatalytic reaction

Maki Suemitsu, Yoshiharu Enta, Yasushi Miyanishi, Nobuo Miyamoto

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62 Citations (Scopus)

Abstract

Time evolutions of O 2p intensity from real-time ultraviolet photoelectron spectroscopy were obtained for the initial oxidation of Si(100)- (2×1) surfaces at oxygen pressures P=7.5×10^-8–2.8×10_-6 Torr and temperatures T=RT-720°C. Despite the separation of the growth mode into the Langmuir-Hinshelwood mode in the low- T–high- P region and the 2D-island growth in the high- T–low- P region, they were unifiedly described by a single rate equation for the oxide coverage ?, which assumes two types of surface oxygen monomers and the number density of oxide islands that scales with θ(1-θ)².

Original language	English
Pages (from-to)	2334-2337
Number of pages	4
Journal	Physical Review Letters
Volume	82
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevLett.82.2334
Publication status	Published - 1999 Jan 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "Time evolutions of O 2p intensity from real-time ultraviolet photoelectron spectroscopy were obtained for the initial oxidation of Si(100)- (2×1) surfaces at oxygen pressures P=7.5×10-8–2.8×10-6 Torr and temperatures T=RT-720°C. Despite the separation of the growth mode into the Langmuir-Hinshelwood mode in the low- T–high- P region and the 2D-island growth in the high- T–low- P region, they were unifiedly described by a single rate equation for the oxide coverage ?, which assumes two types of surface oxygen monomers and the number density of oxide islands that scales with θ(1-θ)2.",

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AU - Suemitsu, Maki

AU - Enta, Yoshiharu

AU - Miyanishi, Yasushi

AU - Miyamoto, Nobuo

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AB - Time evolutions of O 2p intensity from real-time ultraviolet photoelectron spectroscopy were obtained for the initial oxidation of Si(100)- (2×1) surfaces at oxygen pressures P=7.5×10-8–2.8×10-6 Torr and temperatures T=RT-720°C. Despite the separation of the growth mode into the Langmuir-Hinshelwood mode in the low- T–high- P region and the 2D-island growth in the high- T–low- P region, they were unifiedly described by a single rate equation for the oxide coverage ?, which assumes two types of surface oxygen monomers and the number density of oxide islands that scales with θ(1-θ)2.

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