Initial oxidation of MBE-grown Si( 100) surfaces

Yaguchi Hiroyuki; Fujita Ken; Fukatsu Susumu; Shiraki Yasuhiro; Ito Ryoichi; Igarashi Takayuki; Hattori Takeo

doi:10.1016/0039-6028(92)90811-J

Initial oxidation of MBE-grown Si( 100) surfaces

Yaguchi Hiroyuki, Fujita Ken, Fukatsu Susumu, Shiraki Yasuhiro, Ito Ryoichi, Igarashi Takayuki, Hattori Takeo

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have investigated the initial oxidation of MBE-grown Si(100) surfaces with atomic flatness using X-ray photoemission spectroscopy (XPS) and reflection high energy electron diffraction (RHEED). It was found that the MBE-grown surfaces are inert and hardly oxidized even after exposure to molecular oxygen up to 1500 L at room temperature and that the oxygen coverage is saturated at 0.4 ML. At elevated temperatures, however, the surface oxidation was substantially promoted on the atomically flat surface. On the other hand, the oxidation was found to proceed on a deliberately corrugated Si surface prepared by a low temperature MBE growth, even at room temperature.

Original language	English
Pages (from-to)	395-400
Number of pages	6
Journal	Surface Science
Volume	275
Issue number	3
DOIs	https://doi.org/10.1016/0039-6028(92)90811-J
Publication status	Published - 1992 Sept 15

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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title = "Initial oxidation of MBE-grown Si( 100) surfaces",

abstract = "We have investigated the initial oxidation of MBE-grown Si(100) surfaces with atomic flatness using X-ray photoemission spectroscopy (XPS) and reflection high energy electron diffraction (RHEED). It was found that the MBE-grown surfaces are inert and hardly oxidized even after exposure to molecular oxygen up to 1500 L at room temperature and that the oxygen coverage is saturated at 0.4 ML. At elevated temperatures, however, the surface oxidation was substantially promoted on the atomically flat surface. On the other hand, the oxidation was found to proceed on a deliberately corrugated Si surface prepared by a low temperature MBE growth, even at room temperature.",

author = "Yaguchi Hiroyuki and Fujita Ken and Fukatsu Susumu and Shiraki Yasuhiro and Ito Ryoichi and Igarashi Takayuki and Hattori Takeo",

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T1 - Initial oxidation of MBE-grown Si( 100) surfaces

AU - Hiroyuki, Yaguchi

AU - Ken, Fujita

AU - Susumu, Fukatsu

AU - Yasuhiro, Shiraki

AU - Ryoichi, Ito

AU - Takayuki, Igarashi

AU - Takeo, Hattori

PY - 1992/9/15

Y1 - 1992/9/15

N2 - We have investigated the initial oxidation of MBE-grown Si(100) surfaces with atomic flatness using X-ray photoemission spectroscopy (XPS) and reflection high energy electron diffraction (RHEED). It was found that the MBE-grown surfaces are inert and hardly oxidized even after exposure to molecular oxygen up to 1500 L at room temperature and that the oxygen coverage is saturated at 0.4 ML. At elevated temperatures, however, the surface oxidation was substantially promoted on the atomically flat surface. On the other hand, the oxidation was found to proceed on a deliberately corrugated Si surface prepared by a low temperature MBE growth, even at room temperature.

AB - We have investigated the initial oxidation of MBE-grown Si(100) surfaces with atomic flatness using X-ray photoemission spectroscopy (XPS) and reflection high energy electron diffraction (RHEED). It was found that the MBE-grown surfaces are inert and hardly oxidized even after exposure to molecular oxygen up to 1500 L at room temperature and that the oxygen coverage is saturated at 0.4 ML. At elevated temperatures, however, the surface oxidation was substantially promoted on the atomically flat surface. On the other hand, the oxidation was found to proceed on a deliberately corrugated Si surface prepared by a low temperature MBE growth, even at room temperature.

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Initial oxidation of MBE-grown Si( 100) surfaces

Abstract

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