Initial oxidation of HF-acid treated Si(1 0 0) surfaces under air exposure studied by synchrotron radiation X-ray photoelectron spectroscopy

F. Hirose, M. Nagato, Y. Kinoshita, S. Nagase, Y. Narita, Maki Suemitsu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Initial oxidation of HF-acid treated Si(1 0 0) surfaces with air exposure has been studied by using synchrotron radiation X-ray photoelectron spectroscopy. We demonstrate that the initial oxidation is explained not by a layer-by-layer process, but by a non-uniform mechanism. Just after dipping a Si substrate in HF-acid and spin-drying, the Si surface is immediately oxidized partly with a coverage of 0.2. It is considered that the non-uniform oxidation takes place at surface defects on H passivated Si surfaces. With increasing the air exposure up to 1 week, we have found that the non-oxidized part is oxidized uniformly at slower rates compared to the beginning. IR absorption spectroscopy with a multiple-internal-reflection geometry clearly indicates the backbond oxidation of surface Si takes place despite the H passivation produced by the HF-acid treatment.

Original languageEnglish
Pages (from-to)2302-2306
Number of pages5
JournalSurface Science
Volume601
Issue number11
DOIs
Publication statusPublished - 2007 Jun 1

Keywords

  • HF-acid
  • Oxidation
  • Si
  • Si(1 0 0)
  • Synchrotron radiation
  • XPS

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

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