Initial oxidation features of Si(100) studied by Si2p core-level photoemission spectroscopy

J. H. Oh, K. Nakamura, K. Ono, M. Oshima, N. Hirashita, M. Niwa, A. Toriumi, A. Kakizaki

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21 Citations (Scopus)

Abstract

The oxygen adsorption processes during the initial oxidation of Si(100) have been investigated by high-resolution photoemission spectroscopy of the Si2p core levels. The variation of the Si2p intensities was measured in detail for the different sub-oxide (Si1+, Si2+, Si3+, and Si4+) components. The oxygen adsorption processes at room temperature during the initial oxidation were quantitatively analyzed by measuring the intensity ratios of each sub-oxide component as a function of the oxidation time. It is found that the Si1+ and Si2+ species are localized mostly at the first interfacial layer, while the Si3+ and Si4+ components exist in the two-dimensional islands with certain height on the initial oxidation layer, and are expanded horizontally during further oxidation. Our results suggest that the two-dimensional island nucleation occurs during the initial oxidation.

Original languageEnglish
Pages (from-to)395-399
Number of pages5
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume114-116
DOIs
Publication statusPublished - 2001 Mar
Event8th International Conference on Electronic Spectroscopy and Structure (ICESS-8) - Berkeley, CA, USA
Duration: 2000 Aug 82000 Aug 12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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    Oh, J. H., Nakamura, K., Ono, K., Oshima, M., Hirashita, N., Niwa, M., Toriumi, A., & Kakizaki, A. (2001). Initial oxidation features of Si(100) studied by Si2p core-level photoemission spectroscopy. Journal of Electron Spectroscopy and Related Phenomena, 114-116, 395-399. https://doi.org/10.1016/S0368-2048(00)00367-4