Initial growth steps of ultrathin gate oxides

Takeo Hattori, Hiroshi Nohira, Kensuke Takahashi

Research output: Contribution to journalConference articlepeer-review

14 Citations (Scopus)

Abstract

The studies on the atomic-scale surface roughness, interface structures and interface-state-distribution in silicon bandgap at the initial growth steps of ultrathin oxides formed on Si(100) are reviewed in comparison with ultrathin oxides formed on Si(111). Interface-state-density distribution in silicon band gap was found to change periodically with progress of oxidation in accordance with layer-by-layer oxidation. Therefore, the oxide film thickness must be adjusted with the accuracy of less than 0.1 nm in order to minimize the interface-state-densities. The structural difference between 1-nm-thick structural transition layer and bulk silicon dioxide was detected from the measurement of O1s photoelectron spectra. The effect of elastic scattering on Si 2p photoelectrons in silicon oxide, which is important in the accurate structural analysis of ultrathin gate oxides, is also discussed.

Original languageEnglish
Pages (from-to)17-24
Number of pages8
JournalMicroelectronic Engineering
Volume48
Issue number1
DOIs
Publication statusPublished - 1999 Sep
Externally publishedYes
EventProceedings of the 1999 11th Biennial Conference on Insulating Films on Semiconductors (INFOS'99) - Kloster Banz, Ger
Duration: 1999 Jun 161999 Jun 19

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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