Initial growth stage of CaF2 on Si(111)-7 × 7 studied by high temperature UHV-STM

Touru Sumiya, Tadao Miura, Shun Ichiro Tanaka

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21 Citations (Scopus)

Abstract

The initial stages of CaF2 growth on Si(111) at a high substrate temperature have been studied, in situ, with an ultra high vacuum scanning tunneling microscope (UHV-STM) from submonolayer range up to a monolayer. The STM images directly demonstrate that the initial growth mode changes from a three-dimensional island formation to a wetting heteroepitaxial layer growth with increasing substrate temperature. At a substrate temperature of about 470°C, islands of characteristic shape, with steps arranged in the [11̄0] direction, is observed on the Si(111) surface. This island formation initially occurs both at steps and on the flats of Si terraces. At a higher temperature of around 680°C, a submonolayer grows epitaxially from Si step edges, exhibiting a well- ordered row-like structure along the [11̄0] direction. The empty state image of this row-like structure has a 3 × 1 periodicity at 680°C. Further deposition of CaF2 results in covering the Si surface uniformly with the heteroepitaxial monolayers.

Original languageEnglish
Pages (from-to)896-899
Number of pages4
JournalSurface Science
Volume357-358
DOIs
Publication statusPublished - 1996 Jun 20
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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