Abstract
The initial stages of CaF2 growth on Si(111) at a high substrate temperature have been studied, in situ, with an ultra high vacuum scanning tunneling microscope (UHV-STM) from submonolayer range up to a monolayer. The STM images directly demonstrate that the initial growth mode changes from a three-dimensional island formation to a wetting heteroepitaxial layer growth with increasing substrate temperature. At a substrate temperature of about 470°C, islands of characteristic shape, with steps arranged in the [11̄0] direction, is observed on the Si(111) surface. This island formation initially occurs both at steps and on the flats of Si terraces. At a higher temperature of around 680°C, a submonolayer grows epitaxially from Si step edges, exhibiting a well- ordered row-like structure along the [11̄0] direction. The empty state image of this row-like structure has a 3 × 1 periodicity at 680°C. Further deposition of CaF2 results in covering the Si surface uniformly with the heteroepitaxial monolayers.
Original language | English |
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Pages (from-to) | 896-899 |
Number of pages | 4 |
Journal | Surface Science |
Volume | 357-358 |
DOIs | |
Publication status | Published - 1996 Jun 20 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry