Initial backbond oxidation at an unpaired dangling bond site on a hydrogen-terminated Si(100)2 × 1 surface

Hiroshi Kajiyama; Seiji Heike; Taro Hitosugi; Tomihiro Hashizume

Initial backbond oxidation at an unpaired dangling bond site on a hydrogen-terminated Si(100)2 × 1 surface

Hiroshi Kajiyama, Seiji Heike, Taro Hitosugi, Tomihiro Hashizume

Research output: Contribution to journal › Article › peer-review

Abstract

The oxidation reaction at an unpaired dangling bond (DB) site on a hydrogen-terminated Si(100)2 × 1 surface was studied using an ultrahigh-vacuum scanning tunneling microscope. The surface image was observed in situ during the exposure to O₂ molecules at room temperature. During exposure, the unpaired DBs induced structural changes around themselves, and they were mostly localized on one side of a Si dimer bond. We conclude that the backbonds near an unpaired DB were preferentially oxidized, following the dissociation of O₂ molecules at the unpaired DB site. Based on high-resolution measurements, models of backbond-oxidized-structure were proposed.

Original language	English
Pages (from-to)	L1350-L1353
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	37
Issue number	11 SUPPL. B
Publication status	Published - 1998 Nov 15

Keywords

Backbond
Dangling bond
Hydrogen termination
Oxidation
STM
Silicon

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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title = "Initial backbond oxidation at an unpaired dangling bond site on a hydrogen-terminated Si(100)2 × 1 surface",

abstract = "The oxidation reaction at an unpaired dangling bond (DB) site on a hydrogen-terminated Si(100)2 × 1 surface was studied using an ultrahigh-vacuum scanning tunneling microscope. The surface image was observed in situ during the exposure to O2 molecules at room temperature. During exposure, the unpaired DBs induced structural changes around themselves, and they were mostly localized on one side of a Si dimer bond. We conclude that the backbonds near an unpaired DB were preferentially oxidized, following the dissociation of O2 molecules at the unpaired DB site. Based on high-resolution measurements, models of backbond-oxidized-structure were proposed.",

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author = "Hiroshi Kajiyama and Seiji Heike and Taro Hitosugi and Tomihiro Hashizume",

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T1 - Initial backbond oxidation at an unpaired dangling bond site on a hydrogen-terminated Si(100)2 × 1 surface

AU - Kajiyama, Hiroshi

AU - Heike, Seiji

AU - Hitosugi, Taro

AU - Hashizume, Tomihiro

PY - 1998/11/15

Y1 - 1998/11/15

N2 - The oxidation reaction at an unpaired dangling bond (DB) site on a hydrogen-terminated Si(100)2 × 1 surface was studied using an ultrahigh-vacuum scanning tunneling microscope. The surface image was observed in situ during the exposure to O2 molecules at room temperature. During exposure, the unpaired DBs induced structural changes around themselves, and they were mostly localized on one side of a Si dimer bond. We conclude that the backbonds near an unpaired DB were preferentially oxidized, following the dissociation of O2 molecules at the unpaired DB site. Based on high-resolution measurements, models of backbond-oxidized-structure were proposed.

AB - The oxidation reaction at an unpaired dangling bond (DB) site on a hydrogen-terminated Si(100)2 × 1 surface was studied using an ultrahigh-vacuum scanning tunneling microscope. The surface image was observed in situ during the exposure to O2 molecules at room temperature. During exposure, the unpaired DBs induced structural changes around themselves, and they were mostly localized on one side of a Si dimer bond. We conclude that the backbonds near an unpaired DB were preferentially oxidized, following the dissociation of O2 molecules at the unpaired DB site. Based on high-resolution measurements, models of backbond-oxidized-structure were proposed.

KW - Backbond

KW - Dangling bond

KW - Hydrogen termination

KW - Oxidation

KW - STM

KW - Silicon

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 11 SUPPL. B

ER -

Initial backbond oxidation at an unpaired dangling bond site on a hydrogen-terminated Si(100)2 × 1 surface

Abstract

Keywords

ASJC Scopus subject areas

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