Initial backbond oxidation at an unpaired dangling bond site on a hydrogen-terminated Si(100)2 × 1 surface

Hiroshi Kajiyama, Seiji Heike, Taro Hitosugi, Tomihiro Hashizume

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    8 Citations (Scopus)

    Abstract

    The oxidation reaction at an unpaired dangling bond (DB) site on a hydrogen-terminated Si(100)2 × 1 surface was studied using an ultrahigh-vacuum scanning tunneling microscope. The surface image was observed in situ during the exposure to O2 molecules at room temperature. During exposure, the unpaired DBs induced structural changes around themselves, and they were mostly localized on one side of a Si dimer bond. We conclude that the backbonds near an unpaired DB were preferentially oxidized, following the dissociation of O2 molecules at the unpaired DB site. Based on high-resolution measurements, models of backbond-oxidized-structure were proposed.

    Original languageEnglish
    Pages (from-to)L1350-L1353
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume37
    Issue number11 SUPPL. B
    Publication statusPublished - 1998 Nov 15

    Keywords

    • Backbond
    • Dangling bond
    • Hydrogen termination
    • Oxidation
    • STM
    • Silicon

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

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