InGaPN/GaP lattice-matched single quantum wells on GaP (001) grown by MOVPE

D. Kaewket, S. Sanorpim, S. Tungasmita, R. Katayama, K. Onabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Highly luminescence lattice-matched InxGa1-xP 1-xNy/GaP single quantum wells (SQWs) on GaP (001) substrates were successfully grown by metalorganic vapor phase epitaxy (MOVPE). High-resolution X-ray diffraction measurements established that the lattice-matched InxGa1-yP1-yNy/GaP SQWs with various In (x = 0.050, 0.080, 0.135) and N (y = 0.025, 0.048, 0.071) contents were realized with excellent crystal quality and fairly flat interfaces. The results of photoluminescence (PL) and PL-excitation (PLE) showed the strong visible light emission (yellow to red emission) from the SQWs. With increasing In and N contents, the PL peak position and the PLE absorption edge exhibited the red-shift to lower energy, indicating the lowering of the InGaPN conduction band edge. The conduction band offset (ΔEc) of the InGaAPN/GaP quantum structure was estimated to be as high as 270 to 480 meV, which depends on the In and N contents in the well. Our results demonstrate that this novel InGaPN/GaP SQW system appropriates for the fabrication of light-emitting and laser diodes.

Original languageEnglish
Title of host publicationSmart Materials - International Conference on Smart Materials Smart/Intelligent Materials and Nanotechnology, (Smartmat-'08) and the 2nd International Workshop on Functional Materials and Nanomaterial
PublisherTrans Tech Publications
Pages821-824
Number of pages4
ISBN (Print)0878493565, 9780878493562
DOIs
Publication statusPublished - 2008
EventInternational Conference on Smart Materials-Smart/Intelligent Materials and Nano Technology, (SmartMat-'08) and 2nd International Workshop on Functional Materials and Nanomaterials (IWOFM-2) - Chiang Mai, Thailand
Duration: 2008 Apr 222008 Apr 25

Publication series

NameAdvanced Materials Research
Volume55-57
ISSN (Print)1022-6680

Conference

ConferenceInternational Conference on Smart Materials-Smart/Intelligent Materials and Nano Technology, (SmartMat-'08) and 2nd International Workshop on Functional Materials and Nanomaterials (IWOFM-2)
CountryThailand
CityChiang Mai
Period08/4/2208/4/25

Keywords

  • III-V-nitrides
  • InGaPN
  • Metalorganic vapor phase epitaxy
  • Photoluminescence
  • Plexcitation
  • Single quantum wells

ASJC Scopus subject areas

  • Engineering(all)

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