InGaN/GaN quantum wells grown on freestanding HfO 2 photonic crystals

Yongjin Wang, Tong Wu, Fangren Hu, Hongbo Zhu, Kazuhiro Hane

Research output: Contribution to journalArticlepeer-review

Abstract

We report here epitaxial growth of InGaN/GaN quantum wells (QWs) on suspended HfO 2 photonic crystal structures by molecular beam epitaxy (MBE). Suspended HfO 2 photonic crystals are achieved on silicon substrate by combining film evaporation, electron beam lithography, fast atom beam etching of HfO 2 film with dry etching of silicon substrate. InGaN/GaN QWs are subsequently grown on suspended HfO 2 photonic crystal structures by MBE technique, and freestanding HfO 2 photonic crystal slab can sustain complicated stress change during MBE growth. The reflectance and photoluminescence measurements are performed for epitaxial III-nitride structures.

Original languageEnglish
Pages (from-to)601-604
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume9
Issue number3-4
DOIs
Publication statusPublished - 2012 Mar 1

Keywords

  • Fast atom beam etching
  • Freestanding HfO photonic crystal
  • Molecular beam epitaxy

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'InGaN/GaN quantum wells grown on freestanding HfO <sub>2</sub> photonic crystals'. Together they form a unique fingerprint.

Cite this