Abstract
Nanocolumn InGaN/GaN crystals were deposited on micropillared Si substrate by molecular beam epitaxy. Low-temperature InN was used as interlayer. With enough free space, the column crystals grew around all the surface plane of the Si pillars and formed InGaN/GaN quantum-well flower structure. The QW crystals are about 100 nm in diameter and 1.1-1.4 μm in length. Raman spectra measurement of the fower structure shows that E2 mode peak line observed at 567.28 cm-1. Photoluminescence measurement indicates a room temperature PL peak position of 620 nm and two peak positions of 404 nm and 519 nm at temperature 15 K. Hg lamp excited photoluminescence demonstrated a clear fluorescence distribution in the flower structure and much stronger emission compared with the quantum-well crystals on the flat Si substrate.
Original language | English |
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Pages (from-to) | 2338-2341 |
Number of pages | 4 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 4 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2007 Dec 1 |
Event | International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: 2006 Oct 22 → 2006 Oct 27 |
ASJC Scopus subject areas
- Condensed Matter Physics