InGaN/GaN quantum-well nanocolumn crystals on pillared Si substrate with InN as interlayer

F. R. Hu; K. Ochi; Y. Zhao; K. Hane

doi:10.1002/pssc.200674734

InGaN/GaN quantum-well nanocolumn crystals on pillared Si substrate with InN as interlayer

F. R. Hu, K. Ochi, Y. Zhao, K. Hane

ENG - Finemechanics

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Nanocolumn InGaN/GaN crystals were deposited on micropillared Si substrate by molecular beam epitaxy. Low-temperature InN was used as interlayer. With enough free space, the column crystals grew around all the surface plane of the Si pillars and formed InGaN/GaN quantum-well flower structure. The QW crystals are about 100 nm in diameter and 1.1-1.4 μm in length. Raman spectra measurement of the fower structure shows that E₂ mode peak line observed at 567.28 cm^-1. Photoluminescence measurement indicates a room temperature PL peak position of 620 nm and two peak positions of 404 nm and 519 nm at temperature 15 K. Hg lamp excited photoluminescence demonstrated a clear fluorescence distribution in the flower structure and much stronger emission compared with the quantum-well crystals on the flat Si substrate.

Original language	English
Pages (from-to)	2338-2341
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	4
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200674734
Publication status	Published - 2007 Dec 1
Event	International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: 2006 Oct 22 → 2006 Oct 27

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200674734

Cite this

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title = "InGaN/GaN quantum-well nanocolumn crystals on pillared Si substrate with InN as interlayer",

abstract = "Nanocolumn InGaN/GaN crystals were deposited on micropillared Si substrate by molecular beam epitaxy. Low-temperature InN was used as interlayer. With enough free space, the column crystals grew around all the surface plane of the Si pillars and formed InGaN/GaN quantum-well flower structure. The QW crystals are about 100 nm in diameter and 1.1-1.4 μm in length. Raman spectra measurement of the fower structure shows that E2 mode peak line observed at 567.28 cm-1. Photoluminescence measurement indicates a room temperature PL peak position of 620 nm and two peak positions of 404 nm and 519 nm at temperature 15 K. Hg lamp excited photoluminescence demonstrated a clear fluorescence distribution in the flower structure and much stronger emission compared with the quantum-well crystals on the flat Si substrate.",

author = "Hu, {F. R.} and K. Ochi and Y. Zhao and K. Hane",

year = "2007",

month = dec,

day = "1",

doi = "10.1002/pssc.200674734",

language = "English",

volume = "4",

pages = "2338--2341",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "7",

note = "International Workshop on Nitride Semiconductors, IWN 2006 ; Conference date: 22-10-2006 Through 27-10-2006",

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TY - JOUR

T1 - InGaN/GaN quantum-well nanocolumn crystals on pillared Si substrate with InN as interlayer

AU - Hu, F. R.

AU - Ochi, K.

AU - Zhao, Y.

AU - Hane, K.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Nanocolumn InGaN/GaN crystals were deposited on micropillared Si substrate by molecular beam epitaxy. Low-temperature InN was used as interlayer. With enough free space, the column crystals grew around all the surface plane of the Si pillars and formed InGaN/GaN quantum-well flower structure. The QW crystals are about 100 nm in diameter and 1.1-1.4 μm in length. Raman spectra measurement of the fower structure shows that E2 mode peak line observed at 567.28 cm-1. Photoluminescence measurement indicates a room temperature PL peak position of 620 nm and two peak positions of 404 nm and 519 nm at temperature 15 K. Hg lamp excited photoluminescence demonstrated a clear fluorescence distribution in the flower structure and much stronger emission compared with the quantum-well crystals on the flat Si substrate.

AB - Nanocolumn InGaN/GaN crystals were deposited on micropillared Si substrate by molecular beam epitaxy. Low-temperature InN was used as interlayer. With enough free space, the column crystals grew around all the surface plane of the Si pillars and formed InGaN/GaN quantum-well flower structure. The QW crystals are about 100 nm in diameter and 1.1-1.4 μm in length. Raman spectra measurement of the fower structure shows that E2 mode peak line observed at 567.28 cm-1. Photoluminescence measurement indicates a room temperature PL peak position of 620 nm and two peak positions of 404 nm and 519 nm at temperature 15 K. Hg lamp excited photoluminescence demonstrated a clear fluorescence distribution in the flower structure and much stronger emission compared with the quantum-well crystals on the flat Si substrate.

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U2 - 10.1002/pssc.200674734

DO - 10.1002/pssc.200674734

M3 - Conference article

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SP - 2338

EP - 2341

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 7

T2 - International Workshop on Nitride Semiconductors, IWN 2006

Y2 - 22 October 2006 through 27 October 2006

ER -

InGaN/GaN quantum-well nanocolumn crystals on pillared Si substrate with InN as interlayer

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