InGaN/GaN quantum-well nanocolumn crystals on pillared Si substrate with InN as interlayer

F. R. Hu, K. Ochi, Y. Zhao, K. Hane

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

Nanocolumn InGaN/GaN crystals were deposited on micropillared Si substrate by molecular beam epitaxy. Low-temperature InN was used as interlayer. With enough free space, the column crystals grew around all the surface plane of the Si pillars and formed InGaN/GaN quantum-well flower structure. The QW crystals are about 100 nm in diameter and 1.1-1.4 μm in length. Raman spectra measurement of the fower structure shows that E2 mode peak line observed at 567.28 cm-1. Photoluminescence measurement indicates a room temperature PL peak position of 620 nm and two peak positions of 404 nm and 519 nm at temperature 15 K. Hg lamp excited photoluminescence demonstrated a clear fluorescence distribution in the flower structure and much stronger emission compared with the quantum-well crystals on the flat Si substrate.

Original languageEnglish
Pages (from-to)2338-2341
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number7
DOIs
Publication statusPublished - 2007 Dec 1
EventInternational Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan
Duration: 2006 Oct 222006 Oct 27

ASJC Scopus subject areas

  • Condensed Matter Physics

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